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参数资料
| 型号： | 1N4933GP/100 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 320K |
| 代理商： | 1N4933GP/100 |
1N4933GP thru 1N4937GP
Document Number 88509
15-Sep-05
Vishay General Semiconductor
www.vishay.com
1
Pat
ente
d*
DO-204AL (DO-41)
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Fast Switching Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 600 V
IFSM
30 A
trr
200 ns
IR
5.0 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
condition
Cavity-free glass-passivated junction
Fast switching for high efficiency
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and Telecommunication
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N4933GP
1N4934GP
1N4935GP
1N4936GP
1N4937GP
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
145
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 75 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
30
A
Operating junction and storage
temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N4933GP/64 | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934GP/65 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934GP/53 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934GP/4F | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4935GP/54 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4933GP-E3/23 | 功能描述:二极管 - 通用，功率，开关 1.0 Amp 50 Volt Glass Passivated RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1N4933GP-E3/4 | 功能描述:二极管 - 通用，功率，开关 1.0 Amp 50 Volt Glass Passivated RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1N4933GP-E3/54 | 功能描述:二极管 - 通用，功率，开关 1.0 Amp 50 Volt RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1N4933GP-E3/73 | 功能描述:二极管 - 通用，功率，开关 1.0 Amp 50 Volt Glass Passivated RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1N4933GP-HE3/4 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 50V 1A 2-Pin DO-204AL T/R |
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