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参数资料
| 型号： | 1N5059 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 0.8 A, 200 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 72K |
| 代理商： | 1N5059 |
1996 Jun 19
2
Philips Semiconductors
Product specication
Controlled avalanche rectiers
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
200
V
400
V
600
V
800
V
VRWM
crest working reverse voltage
200
V
400
V
600
V
800
V
VR
continuous reverse voltage
200
V
400
V
600
V
800
V
IF(AV)
average forward current
Ttp =45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
2.0
A
Tamb =80 °C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
0.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
50
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.5
65
+175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5060 | Controlled avalanche rectifiers |
| 1N5139A | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5139 | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5140A | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
| 1N5140 | GENERAL PURPOSE ABRUPT VARACTOR DIODES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5059/1 | 制造商:Vishay Semiconductors 功能描述:STANDARD AVALANCHE DIODE |
| 1N5059/4 | 功能描述:整流器 2.0 Amp 200 Volt 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5059_05 | 制造商:DIOTEC 制造商全称:Diotec Semiconductor 功能描述:Silicon Rectifier Diodes – Silizium-Gleichrichterdioden |
| 1N5059_06 | 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:Standard silicon rectifier diodes |
| 1N5059_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Avalanche Sinterglass Diode |
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