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参数资料
| 型号： | 1N5059GP-HE3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封装： | LEAD FREE, PLASTIC, DO-15, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 328K |
| 代理商： | 1N5059GP-HE3 |
1N5059GP thru 1N5062GP
Document Number 88513
17-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 800 V
IFSM
50 A
IR
5.0 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5059GP 1N5060GP 1N5061GP 1N5062GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
* Maximum DC blocking voltage
VDC
200
400
600
800
V
* Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 75 °C
IF(AV)
1.0
A
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
* Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length at
TA = 25 °C
TA = 75 °C
IR(AV)
5.0
150
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5061GP-HE3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5062GP/56-E3 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5060GP/65-E3 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5059GP/58 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC |
| 1N5060GP/100 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5059GPHE3/54 | 功能描述:整流器 200 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5059TAP | 功能描述:整流器 2.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5059TR | 功能描述:整流器 2.0 Amp 200 Volt 16 RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5059-TR | 制造商:Vishay Angstrohm 功能描述:Diode Switching 200V 2A 2-Pin SOD-57 T/R 制造商:Vishay Semiconductors 功能描述:DIODE STANDARD 2 A SOD-57 制造商:Vishay Semiconductors 功能描述:AVALANCHE DIODE, 2A, 200V, SOD-57; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):2A; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:4s ;RoHS Compliant: Yes 制造商:Vishay 功能描述:Diode Switching 200V 2A 2-Pin SOD-57 T/R |
| 1N5060 | 功能描述:整流器 1.0A 400V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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