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参数资料
| 型号： | 1N5222C |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 2.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 91K |
| 代理商： | 1N5222C |
1N5221B - 1N5263B
0.5W Hermetically Sealed Glass Zener Diodes
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
DO-35
Features
Zener voltage range 2.4 to 56 volts
DO-35 package (JEDEC)
Through-hole device type mounting
Hemetically sealed glass
Compression bonded construction
All extermal surface are corrosion
resistant and leads are readily solderable
RoHS compliant
Solder hot dip Tin(Sn) lead finish
Cathode indicated by polarity band
Dimensions is inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
oCambient temperature unless otherwise specified.
Type Number
Symbol
Value
Units
Power Dissipation
Pd
500
mW
Forward Voltage
@ IF=200mA
VF
1.1
V
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 200
OC
Version: A07
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| 1N5227C | 3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5228C | 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5232C | 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5222C-TAP | 功能描述:稳压二极管 2.5 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5222C-TR | 功能描述:稳压二极管 2.5 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5222D | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:1N52 SERIES ZENER DIODES |
| 1N5222-TP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:500 mW Zener Diode 2.4 to 75 Volts |
| 1N5222UR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:500 mW GLASS SURFACE MOUNT ZENER DIODES |
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