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参数资料
| 型号： | 1N5237BTR |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封装： | ROHS COMPLIANT, GLASS PACKAGE-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 118K |
| 代理商： | 1N5237BTR |
1N5221B to 1N5267B
Document Number 85588
Rev. 1.8, 15-Sep-10
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1N5265B
62
2
185
1400
+ 0.097
0.1
47
1N5266B
68
1.8
230
1600
+ 0.097
0.1
52
1N5267B
75
1.7
270
1700
+ 0.098
0.1
56
Part number
Nominal Zener
voltage1)
Test current
Maximum
dynamic
impedance1)
Maximum
dynamic
impedance
Typical
temperature of
coeffizient
Maximum reverse leakage
current
at IZT, VZ
IZT
ZZT at IZT
ZZK at IZK =
0.25 mA
at IZT
IR
VR
V
mA
Ω
α (%/K)
A
V
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
95 9611
0
5
10
15
0
100
200
300
400
500
20
ll
R
thJ
A
-
Ther
m.
Resist.
J
u
nction
Am
b
ient
(K/
W
)
I - Lead Length (mm)
T
L = constant
10
15
20
1
10
100
1000
V
Z
-
V
oltage
Change
(m
V
)
VZ - Z-Voltage (V)
25
95 9598
T
j = 25 °C
I
Z = 5 mA
0
5
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 4. Total Power Dissipation vs. Ambient Temperature
- 60
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
-
Relative
Voltage
Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TKVZ = 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
0
120
160
0
100
300
400
500
600
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
T
amb - Ambient Temperature (°C)
200
95 9602
200
80
40
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5237B-TR | 功能描述:稳压二极管 8.2 Volt 0.5 Watt RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5237B-TR/BKN | 制造商:Vishay Semiconductors 功能描述:Diode; Zener; 8.2 V; 500 mW; DO-35; IR=20 mA; IL=3 a??A; IF=200 mA |
| 1N5237BUR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:500 mW GLASS SURFACE MOUNT ZENER DIODES |
| 1N5237BUR-1 | 制造商:Aeroflex 功能描述:COMMERCIAL ZENER VOLTAGE REGUL 制造商:Aeroflex / Metelics 功能描述:COMMERCIAL ZENER VOLTAGE REGULATOR DIODE - Bulk 制造商:Microsemi Corporation 功能描述:ZENER SGL 8.2V 5% 500MW 2PIN DO-213AA - Bulk |
| 1N5237C | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:1N52 SERIES ZENER DIODES |
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