参数资料
型号: 1N5253B-TAP
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2
文件页数: 3/6页
文件大小: 118K
代理商: 1N5253B-TAP
1N5221B to 1N5267B
Document Number 85588
Rev. 1.8, 15-Sep-10
Vishay Semiconductors
www.vishay.com
3
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1N5265B
62
2
185
1400
+ 0.097
0.1
47
1N5266B
68
1.8
230
1600
+ 0.097
0.1
52
1N5267B
75
1.7
270
1700
+ 0.098
0.1
56
Part number
Nominal Zener
voltage1)
Test current
Maximum
dynamic
impedance1)
Maximum
dynamic
impedance
Typical
temperature of
coeffizient
Maximum reverse leakage
current
at IZT, VZ
IZT
ZZT at IZT
ZZK at IZK =
0.25 mA
at IZT
IR
VR
V
mA
Ω
α (%/K)
A
V
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
95 9611
0
5
10
15
0
100
200
300
400
500
20
ll
R
thJ
A
-
Ther
m.
Resist.
J
u
nction
Am
b
ient
(K/
W
)
I - Lead Length (mm)
T
L = constant
10
15
20
1
10
100
1000
V
Z
-
V
oltage
Change
(m
V
)
VZ - Z-Voltage (V)
25
95 9598
T
j = 25 °C
I
Z = 5 mA
0
5
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
Figure 4. Total Power Dissipation vs. Ambient Temperature
- 60
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
-
Relative
Voltage
Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TKVZ = 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
0
120
160
0
100
300
400
500
600
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
T
amb - Ambient Temperature (°C)
200
95 9602
200
80
40
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