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参数资料
| 型号： | 1N5259B |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 39 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-35, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 326K |
| 代理商： | 1N5259B |
Number:DB-076
Sep. 2010 / F
Page 3
L i c e n s e d b y O N S e m i c o n d u c t o r ,
A t r a d e m a r k o f s e m i c o n d u c t o r
C o m p o n e n t s
I n d u s t r i e s ,
L L C
f o r
Z e n e r T e c h n o l o g y a n d P r o d u c t s .
TAK CHEONG
ELECTRICAL CHARACTERISTICS (TA = 25℃ unless otherwise noted. )
Zener Voltage (Note 2.)
Zener Impedance (Note 3.)
Leakage Current
VZ (Volts)
@IZT
ZZT @IZT
ZZK @IZK
IR @ VR
θ
VZ
(Note 4.)
Device
(Note 1.)
Device
Marking
Min
Nom
Max
(mA)
(Ω)
(mA)
(uA Max)
(Volts)
(mA)
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
44.65
48.45
53.20
57.00
58.90
47
51
56
60
62
49.35
53.55
58.80
63.00
65.10
2.7
2.5
2.2
2.1
2.0
105
125
150
170
185
1000
1100
1300
1400
0.25
0.1
36
39
43
46
47
+0.095
+0.096
+0.097
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
64.60
71.25
77.90
82.65
86.45
68
75
82
87
91
71.40
78.75
86.10
91.35
95.55
1.8
1.7
1.5
1.4
230
270
330
370
400
1600
1700
2000
2200
2300
0.25
0.1
52
56
62
68
69
+0.097
+0.098
+0.099
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
95.0
104.5
114.0
123.5
133.0
100
110
120
130
140
105.0
115.5
126.0
136.5
147.0
1.3
1.1
1.0
0.95
0.9
500
750
900
1100
1300
2600
3000
4000
4500
0.25
0.1
76
84
91
99
106
+0.11
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
142.5
152.0
161.5
171.0
180.5
150
160
170
180
190
157.5
168.0
178.5
189.0
199.5
0.85
0.8
0.74
0.68
0.66
1500
1700
1900
2200
2400
5000
5500
6000
6500
0.25
0.1
114
122
129
137
144
+0.11
VF =1.1V Max @IF = 200mA for 30V below types, VF = 2.0V Max @IF = 200mA for 30~56V types, VF = 3.0V Max @IF = 200mA for 60V
above types
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a standard tolerance on the nominal zener voltage of ± 5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
The zener voltage (VZ) is tested under pulse condition. The measured VZ is guaranteed to be within specification with device
junction in thermal equilibrium.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZk are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are
for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz.
5. TEMPERATURE COEFFICIENT (θVZ)
Test conditions for temperature coefficient are as follows:
A. IZT = 7.5mA, T1 = 25℃, T2 = 125℃ (1N5221B through 1N5242B)
B. IZT = Rated IZT , T1 = 25℃, T2= 125℃ (1N5243B through 1N5281B)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5259B (DO-35) | 制造商:Aeroflex 功能描述:COMMERCIAL ZENER VOLTAGE REGUL 制造商:Aeroflex / Metelics 功能描述:COMMERCIAL ZENER VOLTAGE REGULATOR DIODE - Bulk 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk |
| 1N5259B _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N5259B A0G | 功能描述:DIODE ZENER 39V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包装:带盒（TB） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:39V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:80 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 30V 不同 If 时的电压 - 正向（Vf:1.1V @ 200mA 工作温度:100°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:5,000 |
| 1N5259B BK | 功能描述:DIODE ZENER 39V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:39V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:80 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 30V 不同 If 时的电压 - 正向（Vf:1.1V @ 200mA 工作温度:-65°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:2,500 |
| 1N5259B TR | 功能描述:DIODE ZENER 39V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:剪切带（CT） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:39V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:80 欧姆 不同?Vr 时的电流 - 反向漏电流:100nA @ 30V 不同 If 时的电压 - 正向（Vf）:1.1V @ 200mA 工作温度:-65°C ~ 200°C 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:1 |
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