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参数资料
| 型号： | 1N5262AURTR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 2.4 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封装： | HERMETIC SEALED, GLASS, MLL34, MELF-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 447K |
| 代理商： | 1N5262AURTR |
500 mW GLASS SURFACE MOUNT
ZENER DIODES
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5221UR thru 1N5281BUR, e3
(or MLL5221 thru MLL5281B, e3)
1N5
221
UR
thru
1N5281
R
NOTE 1:
Table as shown lists type numbers, which indicate a tolerance of +/-20% with guaranteed limits on only
VZ, IR, and VF. Devices with
guaranteed limits on all six parameters are indicated by suffix “A” for +/-10%, “B” for +/-5%, “C” for +/-2%, and “D” for +/-1% tolerance.
NOTE 2:
The electrical characteristics are measured after allowing the device to stabilize for 20 seconds.
NOTE 3:
Temperature coefficient (
α
vz). Test conditions for temperature coefficient are as follows:
a.
IZT = 7.5 mA, T1 = 25
oC,
T2 = 125
oC (1N5221AUR & BUR thru 1N5242AUR & BUR)
b.
IZT = Rated IZT, T1 = 25oC,
T2 = 125
oC (1N5243AUR & BUR thru 1N5281AUR & BUR)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
NOTE 4:
These devices may be ordered as either 1N5221UR thru 1N5281BUR or as MLL5221 thru MLL5281B part numbers.
GRAPHS
Microsemi
Scottsdale Division
Page 3
Copyright
2005
8-29-2005 REV B
BU
TEC – End Cap Temperature (
oC), or
TEMPERATURE
CO
EFFICIENT
%/
o C
RATED
P
O
WER
DISSIPATION
TA Ambient Temperature on FR4 PC BOARD
NOMINAL ZENER VOLTAGE (VOLTS)
TEMPERATURE
CO
EFFICIENT
mV/
o
C
Voltage Temperature
Coefficient %/
oC
TEC
TA
mV Change /C
FIGURE 1
FIGURE 2
POWER DERATING CURVE
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
PACKAGE DIMENSIONS
PAD LAYOUT
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.063
0.067
1.60
1.70
B
0.130
0.146
3.30
3.70
C
0.016
0.022
0.41
0.55
INCHES
mm
A
.200
5.08
B
.055
1.40
C
.080
2.03
FIGURE 3
CAPACITANCE vs. ZENER VOLTAGE
(TYPICAL)
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料 |
PDF描述 |
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| 1N5270CURTR | 91 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
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| 1N5996CUR-1TR | 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 1N6014AUR-1 | 39 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 1N6022AUR-1 | 82 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5262B | 功能描述:稳压二极管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5262B (DO-35) | 制造商:Aeroflex 功能描述:COMMERCIAL ZENER VOLTAGE REGUL 制造商:Aeroflex / Metelics 功能描述:COMMERCIAL ZENER VOLTAGE REGULATOR DIODE - Bulk 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk |
| 1N5262B _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N5262B A0G | 功能描述:DIODE ZENER 51V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包装:带盒（TB） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:51V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:125 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 39V 不同 If 时的电压 - 正向（Vf:1.1V @ 200mA 工作温度:100°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:5,000 |
| 1N5262B BK | 功能描述:DIODE ZENER 51V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:51V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:125 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 39V 不同 If 时的电压 - 正向（Vf:1.1V @ 200mA 工作温度:-65°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:2,500 |
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