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参数资料
| 型号： | 1N5262B-35T/B |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封装： | ROHS COMPLIANT, GLASS PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 87K |
| 代理商： | 1N5262B-35T/B |
PAGE . 1
STAD-NOV.08.2006
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DATA SHEET
1N5221B~1N5267B
SILICON ZENER DIODES
VOLTAGE
2.4 to 75 Volts
POWER
500 mWatts
FEATURES
Planar Die construction
500mW Power Dissipation
Ideally Suited for Automated Assembly Processes
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: Molded Glass DO-35
Terminals: Solderable per MIL-STD-750, Method 2026
Polarity: See Diagram Below
Approx. Weight: 0.13 grams
Mounting Position: Any
Ordering information: Suffix : “ -35 ” to order DO-35 Package
Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
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相关PDF资料 |
PDF描述 |
|---|---|
| 1N5262B-35T/R | 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5262B-35 | 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5262C-35T/B | 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5262D-35B | 51 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N5263-35T/R | 56 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5262B-A | 制造商:Vishay Intertechnologies 功能描述: |
| 1N5262B-B | 功能描述:稳压二极管 0.5W 51V 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5262BDO35 | 制造商:Microsemi Corporation 功能描述:DIODE ZENER 51V 500MW DO35 |
| 1N5262BRL | 制造商:ON Semiconductor 功能描述: |
| 1N5262BT | 功能描述:稳压二极管 RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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