参数资料
型号: 1N5299
厂商: CENTRAL SEMICONDUCTOR CORP
元件分类: 参考电压二极管
中文描述: 1.2 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
封装: DO-35, 2 PIN
文件页数: 1/2页
文件大小: 336K
代理商: 1N5299
1N5283 THRU 1N5314
SILICON CURRENT LIMITING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5283 series
types are silicon field effect current regulator diodes
designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the cost effective DO-35 double
plug case which provides many benefits to the
user, including space savings and improved thermal
characteristics. Special selections of IP (regulator
current) are available for critical applications.
MAXIMUM RATINGS: (TL=75°C)
SYMBOL
UNITS
Peak Operating Voltage
POV
100
V
Power Dissipation
PD
600
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
FEATURES:
High Reliability
Special Selections Available
Superior Lot To Lot Consistency
Surface Mount Devices Available
ELECTRICAL CHARACTERISTICS: (TA=25°C)
Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
Type
Regulator
Current
(Note 1)
IP @ VT=25V
Minimum
Dynamic
Impedance
ZT @ VT=25V
Minimum
Knee
Impedance
ZK @ VK=6.0V
Maximum
Limiting
Voltage
VL @ IL=0.8 x IP MIN
MIN
mA
NOM
mA
MAX
mA
V
1N5283
0.198
0.22
0.242
25
2.75
1.0
1N5284
0.216
0.24
0.264
19
2.35
1.0
1N5285
0.243
0.27
0.297
14
1.95
1.0
1N5286
0.270
0.30
0.330
9.0
1.60
1.0
1N5287
0.297
0.33
0.363
6.6
1.35
1.0
1N5288
0.351
0.39
0.429
4.1
1.00
1.05
1N5289
0.387
0.43
0.473
3.3
0.87
1.05
1N5290
0.423
0.47
0.517
2.7
0.75
1.05
1N5291
0.504
0.56
0.616
1.90
0.56
1.10
1N5292
0.558
0.62
0.682
1.55
0.47
1.13
1N5293
0.612
0.68
0.748
1.35
0.40
1.15
1N5294
0.675
0.75
0.825
1.15
0.335
1.20
1N5295
0.738
0.82
0.902
1.00
0.29
1.25
1N5296
0.819
0.91
1.001
0.88
0.24
1.29
1N5297
0.900
1.00
1.10
0.80
0.205
1.35
1N5298
0.990
1.10
1.21
0.70
0.18
1.40
DO-35 CASE
R3 (24-May 2010)
www.centr a lsemi.com
相关PDF资料
PDF描述
1N5286
1N5298
1N5289
1N5283
1N5310
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