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| 型号： | 1N5387AE3TR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 190 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, T-18, 2 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 188K |
| 代理商： | 1N5387AE3TR |
Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Power,...verter, Power Modules, RF Transistors, Power Over Ethernet, PoE, PoE IC
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Zener Voltage Regulator Diode
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Copyright 2011 Microsemi Corporation. All rights reserved. The Endwave logo is a registered trademark of Endwave Corporation.
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相关PDF资料 |
PDF描述 |
|---|---|
| 1N5387BE3TR | 190 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 1N5334BE3 | 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 1N5334C/TR8 | 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 1N5335A/TR8 | 3.9 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 1N5335BE3/TR8 | 3.9 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5387B | 功能描述:DIODE ZENER 190V 5W T-18 RoHS:是 类别:分离式半导体产品 >> 单二极管/齐纳 系列:- 标准包装:1 系列:- 电压 - 齐纳（标称）(Vz):36V 电压 - 在 If 时为正向 (Vf)（最大）:900mV @ 10mA 电流 - 在 Vr 时反向漏电:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 欧姆 安装类型:表面贴装 封装/外壳:SC-70，SOT-323 供应商设备封装:SOT-323 包装:剪切带 (CT) 工作温度:-65°C ~ 150°C 产品目录页面:1585 (CN2011-ZH PDF) 其它名称:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| 1N5387B/TR12 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 190V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 190V 5% T-18 |
| 1N5387B/TR8 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 190V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 190V 5% T-18 |
| 1N5387BE3/TR12 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 190V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 190V 5% T-18 |
| 1N5387BE3/TR13 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 190V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 190V 5% T-18 |
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