参数资料
型号: 1N5391S
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 整流器
英文描述: 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-41
封装: PLASTIC PACKAGE-2
文件页数: 1/3页
文件大小: 73K
代理商: 1N5391S
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
VRMS
VDC
VRRM
I(AV)
@TL
=70 C
1N5391S thru 1N5399S
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
1N
5393S
200
140
200
1N
5391S
50
35
50
1N
5397S
600
420
600
1N
5392S
100
70
100
1N
5396S
500
350
500
1N
5395S
400
280
400
1N
5394S
300
210
300
Maximum Average Forward Rectified Current
.375",(9.5mm) Lead Lengths
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.5
TJ
Operating Temperature Range
-55 to +125
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R0JL
26
C/W
CJ
Typical Junction
Capacitance (Note 1)
20
pF
IR
@TJ=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
5
50
uA
VF
Maximum forward Voltage at 1.5A DC
1.1
V
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
50
A
V
UNIT
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00
2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS
SYMBOL
1N
5398S
800
560
800
1N
5399S
1000
700
1000
700
1000
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.5 Amperes
SEMICONDUCTOR
LITE-ON
REV. 3, Oct-2010, KDAC02
相关PDF资料
PDF描述
1N5391 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
1N5391 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5396 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5399 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5392S 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41
相关代理商/技术参数
参数描述
1N5391S-T 功能描述:整流器 1.5A 50V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N5391-T 功能描述:整流器 1.5A 50V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N5391-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 50V 1.5A 2-Pin DO-15 T/R
1N5392 功能描述:整流器 Vr/100V Io/1.5A T/R RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N5392 _AY _10001 制造商:PanJit Touch Screens 功能描述: