参数资料
型号: 1N5394GP/100-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC
封装: PLASTIC, DO-15, 2 PIN
文件页数: 2/4页
文件大小: 326K
代理商: 1N5394GP/100-E3
www.vishay.com
2
Document Number 88515
14-Oct-05
1N5391GP thru 1N5399GP
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
*JEDEC registered values
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
1N53
91GP
1N53
92GP
1N53
93GP
1N53
94GP
1N53
95GP
1N53
96GP
1N53
97GP
1N53
98GP
1N53
99GP
Unit
* Maximum
instantaneous
forward voltage
at 1.5 A TA = 70 °C
VF
1.4
V
* Maximum DC
reverse current at
rated DC blocking
voltage
TA = 25 °C
TA = 150 °C
IR
5.0
300
A
Typical reverse
recovery time
at IF = 0.5 A,
IR = 1.0 A, Irr = 0.25 A
trr
2.0
s
Typical junction
capacitance
at 4.0V, 1MHz
CJ
15
pF
Parameter
Symbol
1N53
91GP
1N53
92GP
1N53
93GP
1N53
94GP
1N53
95GP
1N53
96GP
1N53
97GP
1N53
98GP
1N53
99GP
Unit
Typical thermal resistance(1)
RθJA
45
°C/W
Figure 1. Forward Current Derating Curve
0
1.0
2.0
25
0
50
75
100
125
150
175
A
v
erage
F
or
w
ard
Rectified
C
u
rrent
(A)
Lead Temperature ( °C)
0.5
0.375" (9.5mm) Lead Length
TA,Ambient
Temperature
TL, Lead
Temperature
60 Hz Resistiveor
Inductive Load
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
0
10
20
30
50
40
1
100
10
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 60 Hz
TJ = TJ max.
8.3 ms Single Half Sine-Wave
相关PDF资料
PDF描述
1N5394GP 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC
1N5394GP/74-E3 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC
1N5394GP/93-E3 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC
1N5396GP/4H-E3 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AC
1N5397GP/60-E3 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AC
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