参数资料
型号: 1N5399/60
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 2/4页
文件大小: 306K
代理商: 1N5399/60
www.vishay.com
2
Document Number 88514
20-Oct-05
1N5391 thru 1N5399
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol 1N5391 1N5392 1N5393 1N5394
1N5395
1N5396 1N5397 1N5398 1N5399
Unit
Max.
instantaneous
forward voltage
at 1.5 A,
TA = 70 °C
VF
1.4
V
Maximum DC
reverse current at
rated DC blocking
voltage
TJ = 25 °C
TJ = 150 °C
IR
5.0
300
A
Typical reverse
recovery time
at IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
15
pF
Parameter
Symbol 1N5391 1N5392 1N5393 1N5394
1N5395
1N5396 1N5397 1N5398 1N5399
Unit
Typical thermal resistance(1)
RθJA
RθJL
55
25
°C/W
Figure 1. Forward Current Derating Curve
0
1.0
1.5
2.0
25
50
75
100
125
150
175
0.5
0
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
0
10
20
30
50
40
1
100
10
TA = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料
PDF描述
1N5399/53 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5394/92 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5396/74 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5396/72 1.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AL
1N5398/56 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL
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