参数资料
型号: 1N5400-T
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 57K
描述: RECTIFIER GPP 50V 3A DO-201AD
其它图纸: 1N540x(G)-T Side
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 3A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 10µA @ 50V
电容@ Vr, F: 50pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-201AD,轴向
供应商设备封装: DO-201AD
包装: 剪切带 (CT)
其它名称: 1N5400CT
1N5400CT-ND
1N5400DICT
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
e3
DS28007 Rev. 7 - 2 1 of 3 1N5400-1N5408
www.diodes.com
Diodes Incorporated
Features
1N5400 - 1N5408
3.0A RECTIFIER
DO-201AD
Dim Min Max
A
25.40
B
7.20 9.50
C
1.20 1.30
D
4.80 5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ TA
= 25C unless otherwise specified
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Polarity: Cathode Band
Marking: Type Number
Weight: 1.1 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS)
35 70 140 280 420 560 700 V
Average Rectified Output Current @ TA
= 105C
(Note 1)
IO
3.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
IFSM
200 A
Forward Voltage @ IF
= 3.0A
VFM
1.0 V
Peak Reverse Current @ TA
= 25C
at Rated DC Blocking Voltage @ TA
= 150C
IRM
10
100
A
Typical Total Capacitance (Note 2)
CT
50 25 pF
Typical Thermal Resistance Junction to Ambient
RJA
15 °C/W
Operating and Storage Temperature Range
Tj,
TSTG
-65 to +150
C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
相关PDF资料
PDF描述
P51-200-S-M-I36-20MA-000-000 SENSOR 200PSIS M10 4-20 MA
983-10ES-WHITE-2"X50YD-6R CONSPICUITY MARKING 2"X 50YD WHT
P51-100-A-Z-M12-20MA-000-000 SENSOR 100PSI 1/4-18NPT 4-20MA
P51-1000-S-L-D-4.5V-000-000 SENSOR 1000PSI M10-1.25 6H 4.5V
P51-100-S-M-I36-20MA-000-000 SENSOR 100PSIS M10 4-20 MA
相关代理商/技术参数
参数描述
1N5400-T/R 制造商:Micro Commercial Components (MCC) 功能描述:Diode Standard Recovery Rectifier 50V 3A 2-Pin DO-201AD T/R
1N5400-T3 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER
1N5400TA 功能描述:DIODE GEN PURP 50V 3A DO201AD 制造商:smc diode solutions 系列:- 包装:带卷(TR) 零件状态:有效 二极管类型:标准 电压 - DC 反向(Vr)(最大值):50V 电流 - 平均整流(Io):3A 不同 If 时的电压 - 正向(Vf):1.2V @ 3A 速度:标准恢复 >500ns,> 200mA(Io) 反向恢复时间(trr):- 不同?Vr 时的电流 - 反向漏电流:5μA @ 50V 不同?Vr,F 时的电容:30pF @ 0V,1MHz 安装类型:通孔 封装/外壳:DO-201AD,轴向 供应商器件封装:DO-201AD 工作温度 - 结:-65°C ~ 175°C 标准包装:1,250
1N5400-TB 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER
1N5400T-G 功能描述:二极管 - 通用,功率,开关 VRRM=50V, IAV=3A RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube