参数资料
型号: 1N5401-T
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 57K
描述: DIODE GPP 100V 3A DO-201AD
其它图纸: 1N540x(G)-T Side
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 3A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 10µA @ 100V
电容@ Vr, F: 50pF @ 4V,1MHz
安装类型: 通孔
封装/外壳: DO-201AD,轴向
供应商设备封装: DO-201AD
包装: 剪切带 (CT)
产品目录页面: 1590 (CN2011-ZH PDF)
其它名称: 1N5401CT
1N5401CT-ND
1N5401DICT
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
e3
DS28007 Rev. 7 - 2 1 of 3 1N5400-1N5408
www.diodes.com
Diodes Incorporated
Features
1N5400 - 1N5408
3.0A RECTIFIER
DO-201AD
Dim Min Max
A
25.40
B
7.20 9.50
C
1.20 1.30
D
4.80 5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ TA
= 25C unless otherwise specified
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Polarity: Cathode Band
Marking: Type Number
Weight: 1.1 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS)
35 70 140 280 420 560 700 V
Average Rectified Output Current @ TA
= 105C
(Note 1)
IO
3.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
IFSM
200 A
Forward Voltage @ IF
= 3.0A
VFM
1.0 V
Peak Reverse Current @ TA
= 25C
at Rated DC Blocking Voltage @ TA
= 150C
IRM
10
100
A
Typical Total Capacitance (Note 2)
CT
50 25 pF
Typical Thermal Resistance Junction to Ambient
RJA
15 °C/W
Operating and Storage Temperature Range
Tj,
TSTG
-65 to +150
C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
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相关代理商/技术参数
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1N5401-T3 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER
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1N5401-TB 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER
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