参数资料
型号: 1N5404/90
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
封装: PLASTIC PACKAGE-2
文件页数: 2/4页
文件大小: 330K
代理商: 1N5404/90
www.vishay.com
2
Document Number 88516
25-Aug-05
1N5400 thru 1N5408
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
with 0.8 x 0.8" (20 x 20 mm) copper heatsinks
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test
condition
Symbol 1N5400
1N5401
1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 Unit
Maximum
instantaneous
forward voltage
at 3.0 A
VF
1.2
V
Maximum DC
reverse current
at rated DC
blocking voltage
TA = 25 °C
TA = 150 °C
IR
5.0
500
A
Typical junction
capacitance
at 4.0 V,
1 MHz
CJ
30
pF
Parameter
Symbol
1N5400
1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408
Unit
Typical thermal
resistance(1)
RθJA
20
°C/W
Figure 1. Forward Current Derating Curve
0
7.0
8.0
60
40
80
100
120
140
160
180
A
v
erage
F
or
w
ard
Rectified
C
u
rrent
(A)
Lead Temperature (°C)
6.0
4.0
5.0
3.0
1.0
2.0
L = 0.25” (6.4 mm)
L = 0.31”
(7.9 mm)
L = 0.50”
(12.7 mm)
TL = Lead Temp.
with Both Leads Heat
Sink Mounted with
Length (L) as shown
60 Hz Resistive
or Inductive
Load
TA = Ambient Temperature
0.375” (9.5 mm) Lead Length
P.C.B. Mounting
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
400
100
40
1
100
10
Instantaneo
u
sF
o
rw
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 60 Hz
1.0 Cycle
TL = 105 °C
8.3 ms Single Half Sine-Wave
相关PDF资料
PDF描述
1N5404/62 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5404/91 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5404/53 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5404/64 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5405/74 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD
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