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参数资料
| 型号： | 1N5416US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS |
| 中文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5B, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 170K |
| 代理商： | 1N5416US |
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5415US thru 1N5420US
1N5415
thru
1N5420
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-
wave input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1 – Typical Reverse Current vs. PIV
FIGURE 2 – Typical Forward Current vs.
Forward Voltage
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5417 | 制造商:Microsemi Corporation 功能描述:Diode Switching 200V 3A 2-Pin Case E 制造商:Sensitron Semiconductors 功能描述:Diode Switching 200V 3A 2-Pin Case 303 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 200V 3A 2PIN E - Bulk 制造商:Microsemi 功能描述:Diode Switching 200V 3A 2-Pin Case E |
| 1N5417/4 | 功能描述:整流器 3.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5417C.TR | 功能描述:DIODE GEN PURP 200V 4.5A AXIAL 制造商:semtech corporation 系列:- 包装:剪切带（CT） 零件状态:在售 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:200V 电流 - 平均整流（Io）:4.5A 不同 If 时的电压 - 正向（Vf:1.1V @ 3A 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:150ns 不同?Vr 时的电流 - 反向漏电流:1μA @ 200V 不同?Vr，F 时的电容:250pF @ 4V，1MHz 安装类型:通孔 封装/外壳:轴向 供应商器件封装:轴向 工作温度 - 结:- 标准包装:1 |
| 1N5417-E3/54 | 功能描述:整流器 3.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5417JAN | 制造商:Microsemi Corporation 功能描述: |
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