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参数资料
| 型号： | 1N5518CUR |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 齐纳二极管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 3.3 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封装： | HERMETIC SEALED, GLASS, MLL34, MELF-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 132K |
| 代理商： | 1N5518CUR |
Low Voltage Surface Mount
500 mW Avalanche Diodes
Microsemi
Scottsdale Division
Page 2
Copyright
2003
10-31-2003 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted. Based on DC measurements at
thermal equilibrium; VF = 1.1 Max @ IF = 200 mA for all types.)
MAX. REVERSE CURRENT
(Note 4)
VR – VOLTS
JEDEC TYPE
NUMBER
(Note 1 and
Note 7)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 2)
VOLTS
TEST
CURRENT
IZT
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ IZT
(Note 3)
OHMS
IR
μAdc
NON & A-
SUFFIX
B-C-D
SUFFIX
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
IZM
(Note 5)
mAdc
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT IZ = 250μA
ND
μV/ √Hz
REGULATION
FACTOR
ΔV
Z
(Note 6)
VOLTS
LOW VZ
CURRENT
IZL
(Note 6)
mAdc
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
3.3
3.6
3.9
4.3
4.7
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
1.0
1.5
1.0
1.5
2.0
115
105
98
88
81
0.5
0.90
0.85
0.75
0.60
2.0
1.0
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
26
30
35
2.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.01
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
8.2
9.1
10.0
11.0
12.0
1.0
40
45
60
80
90
0.5
0.1
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
5.0
10
0.05
0.10
0.20
0.01
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
13.0
14.0
15.0
16.0
17.0
1.0
90
100
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
0.20
0.01
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
18.0
19.0
20.0
22.0
24.0
1.0
100
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
0.20
0.25
0.30
0.01
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
25.0
28.0
30.0
33.0
1.0
100
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
20
0.35
0.40
0.45
0.50
0.01
NOTES:
1.
TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only VZ, IR, and VF.
Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six
parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix.
2.
ZENER VOLTAGE (VZ) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25
oC.
3.
ZENER IMPEDANCE (ZZ) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (IZT) is superimposed on IZT.
4.
REVERSE CURRENT (IR) –
1N5
518
BUR
–
1N5
546
BUR
Reverse currents are guaranteed and are measured at VR as shown on the table.
5.
MAXIMUM REGULATOR CURRENT (IZM) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6.
MAXIMUM REGULATION FACTOR (
ΔV
Z) –
ΔV
Z is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibrium.
7.
PART NUMBER – These may be ordered as either 1N5518BUR-1 thru 1N5546BUR-1 or as MLL5518B-1 thru MLL5546B-1 part
numbers. For military types, use the 1NxxxUR-1 format and also include JAN, JANTX, or JANTXV prefix for desired screening
level, e.g. JANTX1N5518BUR-1, JANTXV1N5532BUR-1, JANTXV1N5534CUR-1, JANTXV1N5545DUR-1, etc.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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| 1N5518CUR-1 | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5518CURTR-1 | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5518D | surface mount silicon Zener diodes |
| 1N5518D-1 | IC 10MHZ Z80 IPC 100-QFP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5518CUR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5518CURTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5518D | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5518D-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5518DTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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