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参数资料
| 型号： | 1N5518DUR-1 |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | 齐纳二极管 |
| 英文描述： | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 中文描述： | 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封装： | HERMETIC SEALED, LEADLESS, GLASS, LL34, MELF-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 252K |
| 代理商： | 1N5518DUR-1 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ZENER DIODE, 500mW
– LEADLESS PACKAGE FOR SURFACE MOUNT
– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/437
LDS-0037 Rev. 1 (072304)
Page 1 of 2
DEVICES
QUALIFIED LEVELS
JAN
JANTX
JANTXV
1N5518BUR-1 Thru 1N5546BUR-1
And
CDLL5518 Thru CDLL5546D
MAXIMUM RATING AT 25°C
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063
0.067
F
0.41
0.55
0.016
0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN
.001 MIN
FIGURE 1
Junction and Storage Temperature:
DC Power Dissipation:
Power Derating:
Forward Voltage @ 200mA:
-65°C to +175°C
500mW @ TEC = +125°C
10mW / °C above TEC = +125°C
1.1 volts maximum
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
ZENER
TEST
CURRENT
MAX. ZENER
IMPEDANCE
B-C-D
SUFFIX
MAXIMUM REVERSE LEAKAGE
CURRENT
B-C-D
SUFFIX
MAIMUM
DC ZENER
REGULATION
FACTOR
CURRENT
LOW
VZ
CURRENT
VZ @ IZT
(NOTE 2)
IZT
ZZT @ IZT
(NOTE 3)
IR
(NOTE 4)
VR = VOLTS
IZM
VZ
(NOTE 5)
IZL
VOLTS
mA
Ohms
Adc
NON &
A-
SUFFIX
B-C-D-
SUFFIX
mA
VOLTS
mA
CDLL5518B
CDLL5519B
CDLL5520B
CDLL5521B
CDLL5522B
3.3
3.6
3.9
4.3
4.7
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
1.0
1.5
1.0
1.5
2.0
115
105
98
88
81
0.90
0.85
0.75
0.60
2.0
1.0
CDLL5523B
CDLL5524B
CDLL5525B
CDLL5526B
CDLL5527B
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
26
30
35
2.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.65
0.30
0.20
0.10
0.05
0.25
0.01
CDLL5528B
CDLL5529B
CDLL5530B
CDLL5531B
CDLL5532B
8.2
9.1
10.0
11.0
12.0
1.0
40
45
60
80
90
0.5
0.1
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
0.05
0.10
0.20
0.01
CDLL5533B
CDLL5534B
CDLL5535B
CDLL5536B
CDLL5537B
13.0
14.0
15.0
16.0
17.0
1.0
90
100
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
0.20
0.01
CDLL5538B
CDLL5539B
CDLL5540B
CDLL5541B
CDLL5542B
18.0
19.0
20.0
22.0
24.0
1.0
100
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
0.20
0.25
0.30
0.01
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
CDLL5543B
CDLL5544B
CDLL5545B
CDLL5546B
25.0
28.0
30.0
33.0
1.0
100
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
0.35
0.40
0.45
0.50
0.01
LEAD FINISH: Tin / Lead
NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only VZ, IR, and VF. Units with “A”
suffix are ±10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six
parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for
±1.0%.
THERMAL RESISTANCE: (RθθθθJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZθθθθJX):
35°C/W maximum
NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C ± 3°C.
POLARITY: Diode to be operated with the banded
(cathode) end positive.
NOTE 3: Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT.
MOUTING SURFACE SELECTION:
The Axial Coefficient of Expansion (COE) of this
device is approximately +6PPM/°C. The COE of the
Mounting Surface System should be selected to
provide a suitable match with this device.
NOTE 4: Reverse leakage currents are measured at VR as shown on the table.
NOTE 5: VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction
in thermal equilibrium.
S
F
G1
G
D
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相关代理商/技术参数 |
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|---|---|
| 1N5518DURTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5518TR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5518UR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5518UR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5518URTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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