型号: | 1N5529B-1 |
英文描述: | LOW REVERSE LEAKAGE CHARACTERISTICS |
中文描述: | 低的反向漏电特性 |
文件页数: | 2/2页 |
文件大小: | 99K |
代理商: | 1N5529B-1 |
相关PDF资料 |
PDF描述 |
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1N5529B | LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5530B | LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5530B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5530 | Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode |
1N5531B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS |
相关代理商/技术参数 |
参数描述 |
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1N5529BTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
1N5529BUR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
1N5529BUR-1 | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-213AA SD - Bulk |
1N5529BURTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
1N5529C | 制造商:JGD 制造商全称:Jinan Gude Electronic Device 功能描述:0.4W LOW VOLTAGE AVALANCHE DIODES |