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参数资料
| 型号： | 1N5530B-1 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 齐纳二极管 |
| 英文描述： | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 中文描述： | 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封装： | DO-7, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 345K |
| 代理商： | 1N5530B-1 |
Low Voltage Avalanche
500 mW Zener Diodes DO-35
SCOTTSD A L E DIVISION
1N5518B thru 1N5546B-1 DO-35
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46
B-1,
DO-35
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted. Based on DC measurements at
thermal equilibrium; VF = 1.1 Max @ IF = 200 mA for all types.)
MAX. REVERSE LEAKAGE
CURRENT (Note 4)
VR – VOLTS
JEDEC
TYPE
NUMBER
(Note 1)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 2)
VOLTS
TEST
CURRENT
IZT
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ IZT
(Note 3)
OHMS
IR
Adc
NON & A-
SUFFIX
B-C-D
SUFFIX
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
IZM
(Note 5)
mAdc
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT IZ = 250A
ND
V/ √Hz
REGULATION
FACTOR
VZ
(Note 6)
VOLTS
LOW VZ
CURRENT
IZL
(Note 6)
mAdc
1N5518
1N5519
1N5520
1N5521
1N5522
3.3
3.6
3.9
4.3
4.7
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
1.0
1.5
1.0
1.5
2.0
115
105
98
88
81
0.5
0.90
0.85
0.75
0.60
2.0
1.0
1N5523
1N5524
1N5525
1N5526
1N5527
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
26
30
35
2.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.01
1N5528
1N5529
1N5530
1N5531
1N5532
8.2
9.1
10.0
11.0
12.0
1.0
40
45
60
80
90
0.5
0.1
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
5.0
10
0.05
0.10
0.20
0.01
1N5533
1N5534
1N5535
1N5536
1N5537
13.0
14.0
15.0
16.0
17.0
1.0
90
100
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
0.20
0.01
1N5538
1N5539
1N5540
1N5541
1N5542
18.0
19.0
20.0
22.0
24.0
1.0
100
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
0.20
0.25
0.30
0.01
1N5543
1N5544
1N5545
1N5546
25.0
28.0
30.0
33.0
1.0
100
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
20
0.35
0.40
0.45
0.50
0.01
NOTES:
1.
TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers shown are +/-20% with guaranteed limits for only VZ, IR, and VF. Units with A suffix are +/-10% with
guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six parameters are indicated by a B suffix for +/-5.0% units,
C suffix for +/-2.0% and D suffix for +/-1.0%.
2.
ZENER VOLTAGE (VZ) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25
oC.
3.
ZENER IMPEDANCE (ZZ) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (IZT) is superimposed on IZT.
4.
REVERSE LEAKAGE CURRENT (IR) –
Reverse leakage currents are guaranteed and are measured at VR as shown on the table.
5.
MAXIMUM REGULATOR CURRENT (IZM) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6.
MAXIMUM REGULATION FACTOR (
VZ) –
VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibrium.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
11-12-2003 REV B
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| 1N5530BURTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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