参数资料
型号: 1N5539B
英文描述: LOW REVERSE LEAKAGE CHARACTERISTICS
中文描述: 低的反向漏电特性
文件页数: 2/2页
文件大小: 99K
代理商: 1N5539B
1N5518 thru 1N5546D
INCLUDING -1 VERSIONS
.1
.2
.5
1
2
5
10
20
50
100
OPERATING CURRENT IZT (mA)
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
ZENER
IMPEDANCE
Z
ZT
(OHMS)
1000
500
400
300
200
100
50
40
30
20
10
5
4
3
2
1
400
300
200
100
0
JL,
Junction
to
Lead
Thermal
Resistance
(°C/W)
0
0.2
0.4
0.6
0.8
1.0
L, lead Length to Heat Sink (inches)
FIGURE 2
TYPICAL THERMAL RESISTANCE
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相关代理商/技术参数
参数描述
1N5539B-1 制造商:CDI-DIODE 制造商全称:Compensated Deuices Incorporated 功能描述:LOW REVERSE LEAKAGE CHARACTERISTICS
1N5539BTR-1 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes
1N5539BUR 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes
1N5539BUR-1 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ZENER DIODE, 500mW
1N5539BURTR-1 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes