参数资料
型号: 1N5615GP/54
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC
封装: PLASTIC, DO-15, 2 PIN
文件页数: 1/4页
文件大小: 324K
代理商: 1N5615GP/54
1N5615GP thru 1N5623GP
Document Number 88522
19-Sep-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Fast Switching Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
50 A
trr
150 ns, 250 ns, 300 ns, 500 ns
IR
0.5 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
condition
Cavity-free glass-passivated junction
Fast switching for high efficiency
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer, automotive and Telecommunication
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbols
1N5615GP
1N5617GP
1N5619GP
1N5621GP
1N5623GP
Units
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
A
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
50
A
Operating junction and storage
temperature range
TJ,TSTG
- 65 to + 175
°C
相关PDF资料
PDF描述
1N5615GP/68 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC
1N5616GP/73 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC
1N5616GP/71 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC
1N5617GP/54 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC
1N5617GP/71 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC
相关代理商/技术参数
参数描述
1N5615GP-E3/4 功能描述:整流器 1.0 Amp 200 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N5615GP-E3/51 功能描述:整流器 1.0 Amp 200 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N5615GP-E3/54 功能描述:整流器 1.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N5615GP-E3/73 功能描述:DIODE GEN PURP 200V 1A DO204AC 制造商:vishay semiconductor diodes division 系列:汽车级,AEC-Q101,Superectifier? 包装:带卷(TR) 零件状态:有效 二极管类型:标准 电压 - DC 反向(Vr)(最大值):200V 电流 - 平均整流(Io):1A 不同 If 时的电压 - 正向(Vf):1.2V @ 1A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):150ns 不同?Vr 时的电流 - 反向漏电流:500nA @ 200V 不同?Vr,F 时的电容:25pF @ 4V,1MHz 安装类型:通孔 封装/外壳:DO-204AC,DO-15,轴向 供应商器件封装:DO-204AC(DO-15) 工作温度 - 结:-65°C ~ 175°C 标准包装:6,000
1N5615GPHE3/54 功能描述:整流器 200 Volt 1.0A 150ns Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel