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参数资料
| 型号： | 1N5621 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP |
| 封装： | HERMETIC SEALED, GLASS, DO-204AP, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 37K |
| 代理商： | 1N5621 |
1N5615 thru 1N5623
Glass Passivated Fast Switching Rectifier
Reverse Voltage 200 to 1000V
Forward Current 1.0A
Patented*
0.034 (0.86)
0.028 (0.71)
DIA.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
1.0 (25.4)
MIN.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol 1N5615 1N5617 1N5619 1N5621 1N5623
Unit
*Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
*Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
*Maximum average forward rectified current
0.375” (9.5mm) lead length at TA = 55°C
IF(AV)
1.0
A
*Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
50
A
Typical thermal resistance (Note 1)
R
ΘJA
55
°C/W
*Operating junction temperature range
TJ
–65 to +175
°C
*Storage temperature range
TSTG
–65 to +200
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol 1N5615 1N5617 1N5619 1N5621 1N5623
Unit
*Minimum reverse breakdown voltage at 50
AV(BR)
220
440
660
880
1100
V
*Maximum instantaneous forward voltage at 1.0A
VF
1.2
V
*Maximum DC reverse current
TA = 25°C
0.5
at rated DC blocking voltage
TA = 100°C
IR
25
A
TA = 200°C
1500
*Maximum reverse recovery time
at IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
150
250
300
500
ns
*Maximum junction capacitance at 12V, 1MHz
CJ
45
35
25
20
15
pF
Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
DO204AP
3/1/00
Features
High temperature metallurgically bonded construction
Hermetically sealed package
Cavity-free glass passivated junction
1.0 ampere operation at TA=55°C with no thermal runaway
Typical IR less than 0.1
A
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-204AP Solid glass body
Terminals: Solder plated axial leads,
solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.02 ounce, 0.56 gram
*Brazed-lead assembly
is covered by
Patent No. 3,930,306
Dimensions in inches
and (millimeters)
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5624GP/100 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5625GP | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5625 | 3 A, 400 V, SILICON, RECTIFIER DIODE |
| 1N5625 | 3 A, 400 V, SILICON, RECTIFIER DIODE |
| 1N5711-TAP | 70 V, SILICON, SIGNAL DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5621/1 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5621/4 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5621-E3/54 | 功能描述:整流器 1.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5621GP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Glass Passivated Junction Fast Switching Rectifier |
| 1N5621GP/1 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 800V 1A 2-Pin DO-15 Bulk |
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