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参数资料
| 型号： | 1N5623US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Standard Rectifier (trr more than 500ns) |
| 中文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, GLASS, D-5A, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 148K |
| 代理商： | 1N5623US |
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5615US thru 1N5623US
1N5615US
–
1N5623US
DESCRIPTION
APPEARANCE
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 13oC/W junction to end cap
Thermal Impedance: 4.5oC/W @ 10 ms heating time
Average Rectified Forward Current (I
O): 1.0 Amps @
TA = 55C
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50μA
AVERAGE
RECTIFIED
CURRENT
IO @ TA
(NOTE 1)
FORWAR
D
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
IR @ VRWM
CAPACITANCE
(MAX.)
C @ VR =12 V
f=1 MHz
MAXIMUM
SURGE
CURRENT
IFSM
(NOTE 2)
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
trr
VOLTS
AMPS
VOLTS
μA
pF
AMPS
ns
50
oC
100
oC
25
oC
100
oC
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
200
400
600
800
1000
220
440
660
880
1100
1.00
.750
.8 MIN.
1.6
MAX.
.5
25
45
35
25
20
15
25
150
250
300
500
NOTE 1: From 1 Amp at TA = 55
oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at T
A = 100
oC. From T
A = 100
oC,
derate linearly at 7.5 mA/
oC to 0 Amps at T
A = 200
oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175
oC.
NOTE 2: TA = 100
oC, f = 60 Hz, I
O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
Microsemi
Scottsdale Division
Page 1
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250 A
Copyright
2009
10-06-2009 REV E; SD47A.pdf
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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| 1N5624 | 功能描述:二极管 - 通用，功率，开关 200V 3.0A RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1N5624 | 制造商:Vishay Semiconductors 功能描述:DIODE 3A 200V |
| 1N5624/4 | 功能描述:整流器 3.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5624-E3/51 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 200V 3A 2-Pin SOD-64 Bulk |
| 1N5624-E3/54 | 功能描述:整流器 3.0 Amp 200 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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