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参数资料
| 型号： | 1N5626GP/72 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 293K |
| 代理商： | 1N5626GP/72 |
1N5624GP thru 1N5627GP
Document Number 88524
14-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
200 V to 800 V
IFSM
125 A
IR
5.0 A
VF
0.95 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5624GP
1N5625GP
1N5626GP
1N5627GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
* Maximum DC blocking voltage
VDC
200
400
600
800
V
* Maximum average forward rectified current
0.375” (9.5 mm) lead length at TA = 70 °C
IF(AV)
3.0
A
* Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
125
A
Maximum full load reverse current, full cycle average
0.375” (9.5 mm) lead length at TA = 70 °C
IR(AV)
200
A
* Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
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|---|---|
| 1N5626GP/53 | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5627GP/68 | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5627GP/4E | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5627GP/70 | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5626GP-E3/1 | 功能描述:整流器 600 Volt 3.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5626GP-E3/4 | 功能描述:整流器 3.0 Amp 600 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5626GP-E3/51 | 功能描述:整流器 3.0 Amp 600 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5626GP-E3/54 | 功能描述:整流器 3.0 Amp 600 Volt RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N5626GP-E3/73 | 功能描述:DIODE GEN PURPOSE DO204AC 制造商:vishay semiconductor diodes division 系列:* 零件状态:停產 标准包装:2,000 |
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