参数资料
型号: 1N5653B
元件分类: 参考电压二极管
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
封装: HERMETIC SEALED, METAL PACKAGE-2
文件页数: 3/4页
文件大小: 212K
代理商: 1N5653B
Silicon Avalanche Diodes
315
www .littelfuse .com
6
SILICON
DIODE
ARRA
YS
1500 Watt Metal Axial Leaded Transient Voltage Suppressors
1N5629*
1N5629A*
1N5630
1N5630A
1N5631
1N5631A
1N5632
1N5632A
1N5633
1N5633A
1N5634
1N5634A
1N5635
1N5635A
1N5636
1N5636A
1N5637*
1N5637A*
1N5638*
1N5638A*
1N5639*
1N5639A*
1N5640
1N5640A
1N5641
1N5641A
1N5642
1N5642A
1N5643*
1N5643A*
1N5644*
1N5644A
1N5645
1N5645A
1N5646*
1N5646A*
Part
Number
Reverse
Stand Off
Voltage
VR
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.20
10.50
11.10
12.10
12.80
12.90
13.60
14.50
15.30
16.20
17.10
17.80
18.80
19.40
20.50
21.80
23.10
24.30
25.60
26.80
28.20
29.10
30.80
Breakdown
Voltage
VBR (Volts) @ IT
MIN
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.50
10.80
11.40
11.70
12.40
13.50
14.30
14.40
15.20
16.20
17.10
18.00
19.00
19.80
20.90
21.60
22.80
24.30
25.70
27.00
28.50
29.70
31.40
32.40
34.20
MAX
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.00
10.50
12.10
11.60
13.20
12.60
14.30
13.70
16.50
15.80
17.60
16.80
19.80
18.90
22.00
21.00
24.20
23.10
26.40
25.20
29.70
28.40
33.00
31.50
36.30
34.70
39.60
37.80
(mA)
10
1.0
Maximum
Reverse
Leakage
IR @ VR
(A)
1000.0
500.0
200.0
50.0
10.0
5.0
Maximum
Clamping
Voltage
VC @ IPP
(Volts)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
Maximum
Peak Pulse
Current
IPP
(A)
139.0
143.0
128.0
132.0
120.0
124.0
109.0
112.0
100.0
103.0
93.0
96.0
87.0
90.0
79.0
82.0
68.0
71.0
64.0
67.0
56.5
59.5
51.5
54.0
47.0
49.0
43.0
45.0
38.5
40.0
34.5
36.0
31.5
33.0
29.0
30.0
Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device.
1N5629 to 1N5647A VF max = 3.5V at IF = 50A 300 S square wave pulse.
1N5648 to 1N5665A VF max = 5.0V at IF = 50A 300 S square wave pulse.
* Preferred voltages.
Max
Voltage
Temperature
Variation
of VBR (mV/°C)
5.0
6.0
7.0
8.0
9.0
10.0
11.0
13.0
12.0
16.0
14.0
17.0
19.0
20.0
19.0
21.0
20.0
25.0
23.0
28.0
25.0
31.0
28.0
31.0
30.0
35.0
31.0
1N56 Series
ELECTRICAL SPECIFICATION @ Tamb 25°C
相关PDF资料
PDF描述
1N5231A(DO-35) 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5237B(DO-35) 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5260A(DO-35) 43 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N5261B(DO-35) 47 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N750A 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
相关代理商/技术参数
参数描述
1N5654 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 60.7V 1.5KW 2PIN DO-13 - Bulk
1N5654A 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 64.1V 1.5KW 2PIN DO-13 - Bulk
1N5654AJANTXV 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 64.1V 1.5KW 2-Pin DO-13 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 64.1V 1.5KW 2-Pin DO-13
1N5655 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 66.4V 1.5KW 2PIN DO-13 - Bulk
1N5655A 制造商:Microsemi Corporation 功能描述:DO-13 SD - Bulk