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参数资料
| 型号： | 1N5664B |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 封装： | HERMETIC SEALED, METAL PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 212K |
| 代理商： | 1N5664B |
Silicon Avalanche Diodes
315
www .littelfuse .com
6
SILICON
DIODE
ARRA
YS
1500 Watt Metal Axial Leaded Transient Voltage Suppressors
1N5629*
1N5629A*
1N5630
1N5630A
1N5631
1N5631A
1N5632
1N5632A
1N5633
1N5633A
1N5634
1N5634A
1N5635
1N5635A
1N5636
1N5636A
1N5637*
1N5637A*
1N5638*
1N5638A*
1N5639*
1N5639A*
1N5640
1N5640A
1N5641
1N5641A
1N5642
1N5642A
1N5643*
1N5643A*
1N5644*
1N5644A
1N5645
1N5645A
1N5646*
1N5646A*
Part
Number
Reverse
Stand Off
Voltage
VR
(Volts)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.20
10.50
11.10
12.10
12.80
12.90
13.60
14.50
15.30
16.20
17.10
17.80
18.80
19.40
20.50
21.80
23.10
24.30
25.60
26.80
28.20
29.10
30.80
Breakdown
Voltage
VBR (Volts) @ IT
MIN
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.50
10.80
11.40
11.70
12.40
13.50
14.30
14.40
15.20
16.20
17.10
18.00
19.00
19.80
20.90
21.60
22.80
24.30
25.70
27.00
28.50
29.70
31.40
32.40
34.20
MAX
7.48
7.14
8.25
7.88
9.02
8.61
10.00
9.55
11.00
10.50
12.10
11.60
13.20
12.60
14.30
13.70
16.50
15.80
17.60
16.80
19.80
18.90
22.00
21.00
24.20
23.10
26.40
25.20
29.70
28.40
33.00
31.50
36.30
34.70
39.60
37.80
(mA)
10
1.0
Maximum
Reverse
Leakage
IR @ VR
(A)
1000.0
500.0
200.0
50.0
10.0
5.0
Maximum
Clamping
Voltage
VC @ IPP
(Volts)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
Maximum
Peak Pulse
Current
IPP
(A)
139.0
143.0
128.0
132.0
120.0
124.0
109.0
112.0
100.0
103.0
93.0
96.0
87.0
90.0
79.0
82.0
68.0
71.0
64.0
67.0
56.5
59.5
51.5
54.0
47.0
49.0
43.0
45.0
38.5
40.0
34.5
36.0
31.5
33.0
29.0
30.0
Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device.
1N5629 to 1N5647A VF max = 3.5V at IF = 50A 300 S square wave pulse.
1N5648 to 1N5665A VF max = 5.0V at IF = 50A 300 S square wave pulse.
* Preferred voltages.
Max
Voltage
Temperature
Variation
of VBR (mV/°C)
5.0
6.0
7.0
8.0
9.0
10.0
11.0
13.0
12.0
16.0
14.0
17.0
19.0
20.0
19.0
21.0
20.0
25.0
23.0
28.0
25.0
31.0
28.0
31.0
30.0
35.0
31.0
1N56 Series
ELECTRICAL SPECIFICATION @ Tamb 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5629 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N5654A | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N5662 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N5804CSM4 | 2.5 A, 100 V, SILICON, RECTIFIER DIODE, MO-041BA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5665 | 功能描述:DIODE TVS 200V 1500W AXL UNI 10% RoHS:否 类别:过电压，电流，温度装置 >> TVS - 二极管 系列:1N56 标准包装:2,000 系列:TransZorb® 电压 - 反向隔离（标准值）:8V 电压 - 击穿:8.89V 功率（瓦特）:500W 电极标记:单向 安装类型:通孔 封装/外壳:DO-204AC，DO-15，轴向 供应商设备封装:DO-204AC（DO-15） 包装:带盒（TB） |
| 1N5665A | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 171V 1.5KW 2-Pin DO-13 制造商:Microsemi Corporation 功能描述:DO-13 SD - Bulk |
| 1N5666 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Transient Absorption Zener |
| 1N5666A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Transient Absorption Zener |
| 1N567 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:GOLD BONDED DIODES(Low forward voltage, low power consumption) |
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