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参数资料
| 型号： | 1N5719 |
| 英文描述： | PIN Diodes for RF Switching and Attenuating |
| 中文描述： | 密码射频二极管开关和衰减 |
| 文件页数： | 2/4页 |
| 文件大小： | 41K |
| 代理商： | 1N5719 |
2
Mechanical
Specifications
The Agilent Outline 15 package
has a glass hermetic seal with
dumet leads. The lead finish is 95-
5 tin-lead (SnPb) for all PIN
diodes. The leads on the Outline
15 package should be restricted
so that the bend starts at least 1/
16 inch (1.6 mm) from the glass
body. Typical package inductance
and capacitance are 2.5 nH and
0.13 pF, respectively. Marking is
by digital coding with a cathode
band.
General Purpose Diodes
Electrical Specifications at TA = 25°C
Maximum
Minimum
Maximum
Part
Total
Breakdown
Residual Series
Effective Carrier
Reverse Recovery
Number
Capacitance
Voltage
Resistance
Lifetime
Time
5082-
C
T (pF)
V
BR (V)
R
S ()
τ (ns)
t
rr (ns)
General Purpose Switching and Attenuating
3001
0.25
200
1.0
100 (min.)
100 (typ.)
3039
0.25
150
1.25
100 (min.)
100 (typ.)
1N5719
0.3**
150
1.25
100 (min.)
100 (typ.)
3077
0.3
200
1.5
100 (min.)
100 (typ)
Band Switching
3188
1.0*
35
0.6**
70 (typ.)*
12 (typ.)
Test
V
R = 50 V
V
R = VBR
I
F =100 mA
I
F = 50 mA
I
F = 20 mA
Conditions
*V
R = 20 V
Measure
*I
F = 20 mA
I
R = 250 mA
V
R = 10 V
**V
R = 100 V
I
R ≤ 10 A
**I
F = 10 mA
*I
F = 10 mA
90% Recovery
f = 1 MHz
f = 100 MHz
*I
R = 6 mA
Notes:
Typical CW power switching capability for a shunt switch in a 50
system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Max.
High
Low
Difference
Effective
Min.
Residual
Max.
Resistance
in
Carrier
Breakdown
Series
Total
Limit, R
H (W)
Limit, R
L (W)
Resistance
Part
Lifetime
Voltage
Resistance Capacitance
vs. Bias
Number
t (ns)
V
BR (V)
R
S ()CT (pF)
Min.
Max.
Min.
Max.
Slope, Dc
5082-3080
1300 (typ.)
100
2.5
0.4
1000
8**
1N5767*
1300 (typ.)
100
2.5
0.4
1000
8**
5082-3379
1300 (typ.)
50
0.4
8**
5082-3081
2500 (typ.)
100
3.5
0.4
1500
8**
Test
I
F = 50 mA
V
R = VBR,IF = 100 mA
V
R = 50 V
I
F = 0.01 mA
I
F = 1.0 mA
Batch
Conditions I
R = 250 mA
Measure
f = 100 MHz
f = 1 MHz
f = 100 MHz
I
F = 20 mA**
Matched at
I
R ≤ 10 A
f = 100 MHz
I
F = 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications:
τ = 1.0 msec minimum
IR = 1
A maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA.
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5767 | PIN Diodes for RF Switching and Attenuating |
| 1N5817 | SCHOTTKY BARRIER RECTIFIER |
| 1N5818 | Schottky barrier diodes |
| 1N5818 | SCHOTTKY BARRIER RECTIFIER |
| 1N5819UR | 1 AMP SCHOTTKY BARRIER RECTIFIERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5719-54 | 制造商:M/A-COM Technology Solutions 功能描述:AXIAL LEAD PIN DIODE, BP - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF PIN DIODE |
| 1N5719-54T | 制造商:M/A-COM Technology Solutions 功能描述:AXIAL LEAD PIN DIODE - Tape and Reel |
| 1N5722 | 制造商:TI 制造商全称:Texas Instruments 功能描述:N-P-N PLANAR SILICON PHOTOTRANSISTORS |
| 1N5723 | 制造商:TI 制造商全称:Texas Instruments 功能描述:N-P-N PLANAR SILICON PHOTOTRANSISTORS |
| 1N5724 | 制造商:TI 制造商全称:Texas Instruments 功能描述:N-P-N PLANAR SILICON PHOTOTRANSISTORS |
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