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参数资料
| 型号： | 1N5811D3A.GRPB |
| 厂商： | SEMELAB LTD |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 150 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DLCC3 VARIANT A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 291K |
| 代理商： | 1N5811D3A.GRPB |
ULTRA FAST RECOVERY
POWER RECTIFIER
Semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab plc
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8613
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 2
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 1 of 4
1N5811D3A / 1N5811D3B
DLCC3 - Light Weight Hermetic Ceramic Surface Mount
Package is designed as a drop In replacement for “D-5B” / “E-
MELF” package
Ultra Fast Reverse Recovery
Switching Power Supply Applications
Space Level and High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VBR
Breakdown Voltage
160V
VRWM
Working Peak Reverse Voltage
150V
IO
Maximum Rectified Current Io1 = TA +55°C (1)
3.0A
Derate above TA 55°C
25mA/°C
IFSM
Surge Current, tp = 8.3ms (2)
125A
TJ
Junction Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJSP(IN)
Thermal Resistance, Junction To Solder Pads TSP = 25°C
17
°C/W
RθJA(PCB)(3)
Thermal Resistance, Junction To Ambient, On PCB
50
°C/W
RθJA(PCB)(4)
Thermal Resistance, Junction To Ambient, On PCB
117
°C/W
Notes
(1) IO1 is rated at 3.0A @ TA = 55°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where
TJ(Max) does not exceed 175°C; This equates to RθJA(PCB) ≤ 52°C/W.
(2) TA = 25°C @ IO=3.0A and VRWM for ten 8.3mS surges at 1 minute intervals.
(3) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (1.0” x 1.0”), (645mm x 645mm) , horizontal in still air.
(4) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (0.070” x 0.155”), (1.78mm x 3.94mm) , horizontal in still air.
IO1 is rated at 1.5A @ TA = 55°C for PC boards where RθJA(PCB) ≤ 120°C/W. Derate at 12.5mA/°C above TA = 55°C in this case.
Recommended solder pad layout dimensions for this device, as detailed within this datasheet for the D-5B device.
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| 1N5811D3A.RAD | 3 A, 150 V, SILICON, RECTIFIER DIODE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5811D3B | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER |
| 1N5811E3 | 制造商:Microsemi Corporation 功能描述:1N5811E3 - Bulk |
| 1N5811JAN | 制造商:Microsemi Corporation 功能描述: 制造商:General Instruments 功能描述: |
| 1N5811JANTXV | 制造商:SNSTRN 功能描述: |
| 1N5811TR | 制造商:Microsemi Corporation 功能描述:DIODE ULTRA FAST 150V 6A B-AXIAL 制造商:Microsemi Corporation 功能描述:DIODE ULTRA FAST 150V 6A EPAK |
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