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参数资料
| 型号： | 1N5817-T |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 41K |
| 描述： | DIODE SCHOTTKY 20V 1A DO-41 |
| 其它图纸： | 1N(40,58), SR Series Top |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 20V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 450mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 1mA @ 20V |
| 电容@ Vr, F： | 110pF @ 4V，1MHz |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | DO-41 |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 1590 (CN2011-ZH PDF) |
| 其它名称： | 1N5817CT 1N5817CT-ND 1N5817DICT |
DS23001 Rev. 8 - 2
1 of 3
1N5817-1N5819
www.diodes.com
Diodes Incorporated
Features
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A
A
B
C
D
DO-41 Plastic
Dim Min Max
A
25.40
B
4.06 5.21
C
0.71 0.864
D
2.00 2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA
= 25C unless otherwise specified
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 5)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 2
Marking: Type Number and Date Code
Weight: 0.3 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol 1N5817
1N5818
1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified Output Current
(Note 1) @ TL
= 90C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
25
A
Forward Voltage (Note 2)
@ IF
= 1.0A
@ IF
= 3.0A
VFM
0.450
0.750
0.550
0.875
0.60
0.90
V
Peak Reverse Leakage Current
@ TA
= 25C
at Rated DC Blocking Voltage (Note 2) @ TA
= 100C
IRM
1.0
10
mA
Typical Total Capacitance (Note 3)
CT
110
pF
Typical Thermal Resistance Junction to Lead (Note 4)
RJL
15
C/W
Typical Thermal Resistance Junction to Ambient
RJA
50
Operating and Storage Temperature Range
Tj,
TSTG
-65 to +125
C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
5. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5817T/R | 制造商:Vishay Semiconductors 功能描述:1 A, 20 V, SILICON, SIGNAL DIODE |
| 1N5817-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 20V 1A 2-Pin DO-41 T/R |
| 1N5817-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER RECTIFIER |
| 1N5817TA | 制造商:Diodes Incorporated 功能描述: |
| 1N5817-TB | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
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