参数资料
型号: 1N5818/65
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
封装: PLASTIC, DO-41, 2 PIN
文件页数: 1/4页
文件大小: 179K
代理商: 1N5818/65
1N5817, 1N5818, 1N5819
Document Number 88525
13-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AL (DO-41)
Schottky Barrier Rectifiers
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
20 V, 30 V, 40 V
IFSM
25 A
VF
0.45 V, 0.55 V, 0.60 V
Tj max.
125 °C
Features
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High frequency operation
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-204AL (DO-41)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
1N5817
1N5818
1N5819
Unit
Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum RMS voltage
VRMS
14
21
28
V
Maximum DC blocking voltage
VDC
20
30
40
V
Maximum non-repetitive peak reverse voltage
VRSM
24
36
48
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 90 °C
IF(AV)
1.0
A
Peak forward surge current, 8.3 ms single half sine-
wave superimposed on rated load
IFSM
25
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Storage temperature range
TJ, TSTG
- 65 to + 125
°C
相关PDF资料
PDF描述
1N5818/4F 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
1N5821-BP 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822-T
1N5822 3 A, SILICON, RECTIFIER DIODE, DO-27
1N5926B 11 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
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