参数资料
型号: 1N5819/54
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 65K
描述: RECTIFIER SCHOTTKY 1A 40V DO-41
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 1mA @ 40V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 剪切带 (CT)
其它名称: 1N5819/4GICT
1N5819/4GICT-ND
1N5819/54GICT
1N5819GICT
1N5819GICT-ND
1 N5817 thru 1 N5819 ‘Q
Vishay General Semiconductor 7
THERMAL cHARAcTERIsTlcs (TA = 25 0C unless othenirise noted)
PARAMETER
Typical thermal resistance
NoteW Thermal resistance from junction to lead vertical P.c.B. mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm X 38 mm) copper pads
ORDERING mFoRMATIoN (Example)
PREFERRED P/N UNIT WEIGHT (9) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5819-E3/54 13" diameter paper tape and reel
1N5B19—E3/73 Ammo pack packaging
RATINGS AND cHARAcTERIsTIcs cuRvEs
(TA : 25 °C unless otherwise noted)
10 1000 0.01Number of Cycles at 60 HZ Percent of Rated Peak Reverse Voltage (%)
075
o
Pulse Width : sou us
Resistive or inductive Load 1 “/D Duty Cycle
0 375“ (9.5 mm) Lead Lengtn
025 0.1
Average Forward Current (A)
D
Ininstantaneous Forward Current (A)
0 02 0.4 0.6 0.5 1.0 12 1.4 16
Case Temperature (°C) Instantaneous FonNard Voltage (V)Fig. 1 — Forward Current Derating Curve Fig. 3 — Typical Instantaneous Forward characteristics
100
0
D1
Peak Forward Surge Current (A)
instantaneous Reverse Current (mA)
Fig. 2 - Maximum Non-Repetitive Peak FonNard Surge Current Fig. 4 - Typical Reverse Characteristics
www.vishay.com For technical questions within your region, please Contact one of the following: Document Number: 88525
2 DiodesAmericas@vishav.com, DiodesAs|a@vishay.com, DiodesEuroge@vishav.com Revision: 20-Oct-09
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