参数资料
型号: 1N5819TR
厂商: Vishay Semiconductors
文件页数: 3/3页
文件大小: 0K
描述: DIODE SCHOTTKY 1A 40V DO41
标准包装: 1
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 1mA @ 40V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL
包装: 剪切带 (CT)
‘lllvVISHAYQ7 www.vishay.com
IF - Instantaneous Forward current (A)
94014701 VFM - Forward Voltage Drop (V)Fig. 1 — Maximum Forward voltage Drop Characteristics
100
2 10
_E,‘E
Q’ 1t3O 0 1OIn._
gQ, 0.01I:
_= 0.001
0.0001
94614702 VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage
100
CT - Junction Capacitance (pF)
0 10 20 30 40 50
04014703 VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Note(1) Formula used: TC : TJ ? (Pd + PdREV) X Rmdc;Pd : Forward power loss : IHAV) X VFM at (IF(AV}/D) (see fig. 6); PdHEV : Inverse power loss : VR1 x IR (1 — D); In at VH1 : 80 % rated VR
vs-1 N581 9, vs-1 N581 9-M3
Vishay Semiconductors
160
140
120
100
80 Square wave (D : 0.50)Rated VR arplied
80 see note (1
Allowable Lead Temperature (ac)
400 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
94614704 IFW) - Average Forward Current (A)
Fig. 4 ? Typical Allowable Lead Temperature vs.Average FonNard Current
E
(II(IIo
_I\-0)BoIa.0)m(VL0)><
0 0.5 1 1.5
94614705 Average Forward current - IF(Av) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
IFSM - Non-Repetitive surge current (A)
100
Al Any Rated Load ConditionAnd With rated VRRM AppliedFollowing Surge
1010 100 1000 10 000
94514706 Ip — square wave Pulse Duration (us)
Fig. 6 - Typical Non-Repetitive Surge Current
Revision: 21-Sep-11
Document Number: 94614
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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