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参数资料
| 型号： | 1N5819UR-1 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE, DO-213AB |
| 封装： | HERMETIC SEALED, GLASS, LL41, MELF-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 40K |
| 代理商： | 1N5819UR-1 |
6
LAKE
STREET,
LAWRENCE,
MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
CDI
WORKING PEAK
MAXIMUM REVERSE
TYPE
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
NUMBER
VOLTAGE
AT RATED VOLTAGE
VRWM
VF @ 0.1A
VF @ 1.0A
VF @ 3.1A
IR @ +25°C
IR @ +100°C
VOLTS
mA
CDLL5817
20
0.36
0.60
0.9
0.1
5.0
CDLL5818
30
0.36
0.60
0.9
0.1
5.0
CDLL5819
40
0.36
0.60
0.9
0.1
5.0
J,JX,JV & JS
45
0.34
0.49
0.8
0.05
5.0
5819UR-1
CDLL6759
60
0.38
0.69
N/A
0.1
6.0
CDLL6760
80
0.38
0.69
N/A
0.1
6.0
CDLL6761
100
0.38
0.69
N/A
0.1
6.0
J,JX,JV & JS
100
0.38
0.69
N/A
0.10
12.0
6761UR-1
CDLL1A20
20
0.36
0.60
0.9
0.1
5.0
CDLL1A30
30
0.36
0.60
0.9
0.1
5.0
CDLL1A40
40
0.36
0.60
0.9
0.1
5.0
CDLL1A50
50
0.36
0.60
0.9
0.1
5.0
CDLL1A60
60
0.38
0.69
N/A
0.1
12.0
CDLL1A80
80
0.38
0.69
N/A
0.1
12.0
CDLL1A100
100
0.38
0.69
N/A
0.1
12.0
147
1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN
JAN, JANTX, JANTXV
AND JANS PER MIL-PRF-19500/586
1 AMP SCHOTTKY BARRIER RECTIFIERS
HERMETICALLY SEALED
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED
1N5819UR
and
CDLL5817 thru CDLL5819
and
CDLL6759 thru CDLL6761
and
CDLL1A20 thru CDLL1A100
FIGURE 1
DESIGN DATA
CASE: DO-213AB, Hermetically sealed
glass case. (MELF, LL41)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
40 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 12
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @TEC = +55°C
Derating: 14 mA / °C above TEC = +55°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
2.39
2.66
.094
.105
F
0.41
0.55
.016
.022
G
4.80
5.20
.189
.205
G1
4.11 REF.
.159 REF.
S
0.03 MIN.
.001 MIN.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5819UR-1/TR | 功能描述:SCHOTTKY 制造商:microsemi corporation 系列:- 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:45V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf:490mV @ 1A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:50μA @ 45V 不同?Vr，F 时的电容:70pF @ 5V，1MHz 安装类型:表面贴装 封装/外壳:DO-213AA 供应商器件封装:DO-213AA 工作温度 - 结:-65°C ~ 125°C 标准包装:100 |
| 1N5819UR-1JAN | 制造商:Microsemi Corporation 功能描述: |
| 1N5819UR-1JANTX | 制造商:Microsemi Corporation 功能描述: |
| 1N5819UR-1JANTX/T/R/DLT | 制造商:Microsemi Corporation 功能描述:1N5819UR-1JANTX/T/R/DLT - Virtual or Non-Physical Inventory (Software & Literature) |
| 1N5819UR-1JANTX/TR | 制造商:Microsemi Corporation 功能描述:Diode Schottky 45V 1A 2-Pin DO-213AB T/R |
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