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参数资料
| 型号： | 1N5820-B |
| 厂商： | DIODES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 中文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 64K |
| 代理商： | 1N5820-B |
DS23003 Rev. 8 - 2
1 of 2
1N5820-1N5822
www.diodes.com
Diodes Incorporated
Features
1N5820 - 1N5822
3.0A SCHOTTKY BARRIER RECTIFIERS
DO-201AD
Min
Dim
A
B
C
D
Max
25.40
7.20
9.50
1.20
1.30
4.80
5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Marking: Type Number
Ordering Information: See Last Page
Weight: 1.1 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
1N5820
1N5821
1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (Note 2)
20
30
40
V
14
21
28
V
@ T
L
= 95 C
I
O
3.0
A
@ T
L
= 75 C
@ I
F
= 3.0A
@ I
F
= 9.4A
@ T
A
= 25 C
@ T
A
= 100 C
I
FSM
80
A
V
FM
0.475
0.850
0.500
0.900
2.0
20
40
10
0.525
0.950
V
Peak Reverse Current
at Rated DC Blocking Voltage (Note 2)
I
RM
mA
Typical Thermal Resistance (Note 3)
R
JA
R
JL
T
j,
T
STG
C/W
Operating and Storage Temperature Range
-65 to +125
C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration pulse test used to minimize self-heating effect.
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)
copper pad.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5820-T | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 1N5821-B | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 1N5821-T | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 1N5822-B | 3.0A SCHOTTKY BARRIER RECTIFIERS |
| 1N5822-T | 3.0A SCHOTTKY BARRIER RECTIFIERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5820-BP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:3 Amp Schottky Barrier Rectifier 20 - 40 Volts |
| 1N5820-E3/23 | 功能描述:肖特基二极管与整流器 20 Volt 3.0 Amp 80 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5820-E3/4 | 功能描述:肖特基二极管与整流器 20 Volt 3.0 Amp 80 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5820-E3/51 | 功能描述:肖特基二极管与整流器 Vr/30V Io/3A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5820-E3/54 | 功能描述:肖特基二极管与整流器 Vr/20V Io/3A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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