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参数资料
| 型号： | 1N5822/4E-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/4页 |
| 文件大小： | 180K |
| 代理商： | 1N5822/4E-E3 |
www.vishay.com
2
Document Number 88526
13-Jul-05
1N5820, 1N5821 & 1N5822
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with
2.5 x 2.5" (63.5 x 63.5 mm) copper pad
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbols
1N5820
1N5821
1N5822
Units
Maximum instantaneous forward voltage
at 3.0 (1)
VF
0.475
0.500
0.525
V
Maximum instantaneous forward voltage
at 9.4 (1)
VF
0.850
0.900
0.950
V
Maximum average reverse current at rated DC
blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
2.0
20
mA
Parameter
Symbols
1N5820
1N5821
1N5822
Units
Typical thermal resistance (1)
RθJA
RθJL
40
10
°C/W
Figure 1. Forward Current Derating Curve
0
20
40
60
80
100
120
140
0
1.0
2.0
3.0
4.0
Average
Forward
Current
(A)
Lead Temperature (°C)
Resistive or Inductive Load
0.375" (9.5mm) lead length
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
20
30
40
10
70
80
60
50
Peak
Forward
Surge
Current
(A)
TJ =TJ max.
8.3ms single half sine-wave
Number of Cycles at 60 Hz
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5821/4E-E3 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5821/4F-E3 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5820/51-E3 | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5821-E3/54 | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5822 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5822-AP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:3 Amp Schottky Barrier Rectifier 20 - 40 Volts |
| 1N5822-B | 功能描述:肖特基二极管与整流器 Vr/40V Io/3A BULK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1N5822-BP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:3 Amp Schottky Barrier Rectifier 20 - 40 Volts |
| 1N5822-E3 | 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 3 A DO-201 |
| 1N5822-E3/1 | 功能描述:肖特基二极管与整流器 40 Volt 3.0 Amp 80 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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