参数资料
型号: 1N5822/73
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
封装: PLASTIC PACKAGE-2
文件页数: 1/4页
文件大小: 180K
代理商: 1N5822/73
1N5820, 1N5821 & 1N5822
Document Number 88526
13-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
20 V, 30 V, 40 V
IFSM
80 A
VF
0.475 V, 0.500 V, 0.525 V
Tj max.
125 °C
Features
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-201AD
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbols
1N5820
1N5821
1N5822
Units
*Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum RMS voltage
VRMS
14
21
28
V
Maximum DC blocking voltage
VDC
20
30
40
V
Non-repetitive peak reverse voltage
VRSM
24
36
48
V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TL = 95 °C
IF(AV)
3.0
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Storage temperature range
TJ, TSTG
- 65 to + 125
°C
相关PDF资料
PDF描述
1N5822/72 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/71 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/58 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/62 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/4E-E3 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
相关代理商/技术参数
参数描述
1N5822-AP 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:3 Amp Schottky Barrier Rectifier 20 - 40 Volts
1N5822-B 功能描述:肖特基二极管与整流器 Vr/40V Io/3A BULK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N5822-BP 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:3 Amp Schottky Barrier Rectifier 20 - 40 Volts
1N5822-E3 制造商:Vishay Semiconductors 功能描述:DIODE SCHOTTKY 3 A DO-201
1N5822-E3/1 功能描述:肖特基二极管与整流器 40 Volt 3.0 Amp 80 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel