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参数资料
| 型号： | 1N5923BRL |
| 厂商： | MOTOROLA INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 8.2 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 文件页数： | 1/5页 |
| 文件大小： | 57K |
| 代理商： | 1N5923BRL |
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Motorola TVS/Zener Device Data
6-1
500 mW DO-35 Glass Data Sheet
1 to 3 Watt DO-41 Surmetic 30
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
1 to 3 Watt Surmetic 30
Silicon Zener Diodes
...a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics
that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an
axial-lead, transfer-molded plastic package offering protection in all common environmen-
tal conditions.
Specification Features:
Surge Rating of 98 Watts @ 1 ms
Maximum Limits Guaranteed On Up To Six Electrical Parameters
Package No Larger Than the Conventional 1 Watt Package
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WEIGHT: 0.4 gram (approx)
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Power Dissipation @ TL = 75°C
Lead Length = 3/8
″
Derate above 75
°C
PD
3
24
Watts
mW/
°C
DC Power Dissipation @ TA = 50°C
Derate above 50
°C
PD
1
6.67
Watt
mW/
°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +200
°C
1N5913B
SERIES
CASE 59-03
DO-41
PLASTIC
1–3 WATT
DO-41
SURMETIC 30
1 TO 3 WATT
ZENER REGULATOR
DIODES
3.3–400 VOLTS
Figure 1. Power Temperature Derating Curve
TL, LEAD TEMPERATURE (°C)
P
,MAXIMUM
DISSIP
A
TION
(W
A
TTS)
D
0
20
40
60
200
80
100
120
140
160
180
0
1
2
3
4
5
L = 1/8
″
L = 3/8
″
L = 1
″
L = LEAD LENGTH
TO HEAT SINK
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5923BRLG | 功能描述:稳压二极管 8.2V 3W RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5923BUR-1 | 制造商:Microsemi Corporation 功能描述:ZENER SGL 8.2V 5% 1.25W 2PIN DO-213AB - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 8.2V 1.25W DO-213AB |
| 1N5923C | 功能描述:Zener Diode 制造商:microsemi corporation 系列:* 零件状态:在售 标准包装:1 |
| 1N5923C G | 制造商:Microsemi Corporation 功能描述:ZENER SGL 8.2V 2% 1.25W 2PIN DO-41 - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 8.2V 1.25W DO-41 |
| 1N5923CE3/TR13 | 功能描述:DIODE ZENER 8.2V 1.5W DO204AL 制造商:microsemi corporation 系列:- 包装:带卷（TR） 零件状态:有效 电压 - 齐纳（标称值）（Vz）:8.2V 容差:±2% 功率 - 最大值:1.5W 阻抗（最大值）（Zzt）:3.5 欧姆 不同?Vr 时的电流 - 反向漏电流:5μA @ 6.5V 不同 If 时的电压 - 正向（Vf）:1.2V @ 200mA 工作温度:-65°C ~ 150°C 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-204AL（DO-41） 标准包装:5,000 |
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