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参数资料
型号： 1N5997UR-1
厂商： MICROSEMI CORP-LAWRENCE
元件分类： 齐纳二极管
英文描述： 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA
封装： HERMETIC SEALED, GLASS, SOD-80, MELF-2
文件页数： 2/3页
文件大小： 458K
代理商： 1N5997UR-1
METALLURGICALLY BONDED GLASS
SURFACE MOUNT 500 mW Zener Diodes
SCOTTSD A L E DIVISION
1N5985UR-1 thru 1N6031BUR-1
( or MLL5985-1 thru MLL6031B-1)
W
.Mi
cr
os
em
i
.C
O
M
1N5985UR
thru
1N
60
31
B
U
R
-1
*ELECTRICAL CHARACTERISTICS @ 30oC Lead Temperature. Lead Length 3/8”.
Maximum Zener Impedance
(Note 1)
Maximum Reverse Current
ZZT @ IZT
OHMS
ZZK @ IZK = 0.25 ma
OHMS
IR
@
VR
A
Volts
JEDEC
Type
Number**
Nominal
Zener
Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mA
B,C,D
Suffix
A, Non-
Suffix
B,C,D
Suffix
A, Non-
Suffix
B,C,D
Suffix
A, Non-
Suffix
B,C,D
Suffix
A, Non-
Suffix
Max. DC
Zener
Current
IZM
(Note 3)
Typical
Temp.
Coeff.
of Zener
Voltage
αVZ
%/
oC
1N5985BUR-1
1N5986BUR-1
1N5987BUR-1
1N5988BUR-1
2.4
2.7
3.0
3.3
5.0
100
95
110
100
1800
1900
2000
2200
2000
2200
2300
2400
100
75
50
25
100
75
1.0
0.5
208
185
167
152
-0.09
-0.075
-0.07
-0.06
1N5989BUR-1
1N5990BUR-1
1N5991BUR-1
1N5992BUR-1
3.6
3.9
4.3
4.7
5.0
90
88
70
95
90
2300
2400
2500
2200
2500
15
10
5.0
3.0
50
25
15
10
1.0
1.5
0.5
1.0
139
128
116
106
-0.055
-0.045
-0.01
+0.01
1N5993BUR-1
1N5994BUR-1
1N5995BUR-1
1N5996BUR-1
5.1
5.6
6.2
6.8
5.0
50
25
10
8.0
88
70
50
25
2050
1800
1300
750
2500
2200
2050
1800
2.0
1.0
5.0
3.0
2.0
3.0
4.0
5.2
1.0
1.5
2.0
3.0
98
89
81
74
+0.025
+0.035
+0.04
+0.044
1N5997BUR-1
1N5998BUR-1
1N5999BUR-1
1N6000BUR-1
7.5
8.2
9.1
10
5.0
7.0
10
15
10
15
18
22
600
1300
750
600
0.5
0.1
1.0
0.5
6.0
6.5
7.0
8.0
4.0
5.2
6.0
6.5
67
61
55
50
+0.051
+0.055
+0.061
+0.065
1N6001BUR-1
1N6002BUR-1
1N6003BUR-1
1N6004BUR-1
11
12
13
15
5.0
18
22
25
32
25
32
36
42
600
0.1
8.4
9.1
9.9
11
7.0
8.0
8.4
9.1
45
42
38
33
+0.068
+0.073
+0.075
+0.079
1N6005BUR-1
1N6006BUR-1
1N6007BUR-1
1N6008BUR-1
16
18
20
22
5.0
36
42
48
55
48
55
62
70
600
0.1
12
14
15
17
9.9
11
12
14
31
28
25
23
+.080
+0.083
+0.085
+0.087
1N6009BUR-1
1N6010BUR-1
1N6011BUR-1
1N6012BUR-1
24
27
30
33
5.0
62
70
78
88
78
88
95
110
600
700
600
700
800
0.1
18
21
23
25
15
17
18
21
19
17
15
+0.090
+0.091
+0.093
+0.094
1N6013BUR-1
1N6014BUR-1
1N6015BUR-1
1N6016BUR-1
36
39
43
47
5.0
2.0
95
130
150
170
130
170
180
200
700
800
900
1000
900
1000
1100
1300
0.1
27
30
33
36
23
25
27
30
14
13
12
11
+0.094
+0.095
+0.096
1N6017BUR-1
1N6018BUR-1
1N6019BUR-1
1N6020BUR-1
51
56
62
68
2.0
180
200
225
240
225
240
265
280
1300
1400
1600
1400
1600
1700
2000
0.1
39
43
47
52
33
36
39
43
9.8
8.9
8.0
7.4
+0.096
+0.097
1N6021BUR-1
1N6022BUR-1
1N6023BUR-1
1N6024BUR-1
75
82
91
100
2.0
1.0
265
280
300
500
300
350
400
800
1700
2000
2300
2600
2300
2600
3000
4000
0.1
56
62
69
76
47
52
56
62
6.7
6.1
5.5
5.0
+0.098
+0.099
+0.110
1N6025BUR-1
1N6026BUR-1
1N6027BUR-1
1N6028BUR-1
110
120
130
150
1.0
650
800
950
1250
950
1250
1400
1700
3000
4000
4500
5000
4500
5000
5500
6000
0.1
84
91
99
114
69
76
84
91
4.5
4.2
3.8
3.3
+0.110
1N6029BUR-1
1N6030BUR-1
1N6031BUR-1
160
180
200
1.0
1400
1700
2000
2350
2700
5500
6000
7000
8000
9000
0.1
122
137
152
99
114
122
3.1
2.8
2.5
+0.110
* Indicates JEDEC Registered Data. The type number without a suffix letter before the “UR” suffix indicates a +/-20% tolerance.
For 10% tolerance, add suffix A; for 5% tolerance, add suffix B (as shown); for 2% tolerance suffix C; for 1% tolerance suffix D.
** These part numbers may also be ordered as MLL5985B-1 thru MLL6031B-1 for the applicable part number and tolerance in
this series.
NOTES:
1.
Zener Impedance is derived from the 1 kHz ac voltage that results when an ac current having an rms value equal to 10% of dc
zener current (IZT or IZK) is superimposed on IZT or IZK. See MicroNote 202 for dynamic impedance variation with other
operating currents.
2.
Voltage Measurements to be performed 20 seconds after application of the dc test current.
3.
The maximum zener current IZM shown is for the nominal voltages. The following formula can be used to determine the worst
case current for any tolerance device:
IZM =
Where VZM is the high end of the voltage tolerance specified and P is the rated power of the device.
P
VZM
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
11-05-2003 REV 0
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PDF描述
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相关代理商/技术参数
参数描述
1N5998A 制造商:Microsemi Corporation 功能描述:ZENER SGL 8.2V 10% 480MW 2PIN DO-35 - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 8.2V 500MW DO-35
1N5998B 功能描述:稳压二极管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
1N5998B BK 功能描述:DIODE ZENER 8.2V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:8.2V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:7 Ohms 不同?Vr 时的电流 - 反向漏电流:500nA @ 6.5V 不同 If 时的电压 - 正向（Vf:1.5V @ 100mA 工作温度:-65°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:2,500
1N5998B R0 制造商:SKMI/Taiwan 功能描述:DO-35;ZENER 500MW 8V2
1N5998B_T50A 功能描述:稳压二极管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel
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