- 您现在的位置：买卖IC网 > PDF目录142098 > 1N5999AURTR (MICROSEMI CORP-SCOTTSDALE) 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA PDF资料下载
参数资料
| 型号： | 1N5999AURTR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 封装： | HERMETIC SEALED, GLASS, MLL34, MELF-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 455K |
| 代理商： | 1N5999AURTR |
Surface Mount 500 mW Zener Diodes
SCOTTSD A L E DIVISION
1N5985UR thru 1N6031BUR
( or MLL5985 thru MLL6031B)
W
.Mi
cr
os
em
i
.C
O
M
1N5985UR
thru
1N6031BUR-1
DESCRIPTION
APPEARANCE
The popular 1N5985UR thru 1N6031BUR (or MLL5985 thru MLL6031B) series of
0.5 watt Zener Voltage Regulators provides selection from 2.4 to 200 volts in
standard 5% or 10% tolerances as well as tighter tolerances identified by different
suffix letters on the part number. These glass surface mount DO-213AA Zeners
are also available with an internal metallurgical bond option by adding a “-1” suffix
(see separate data sheet) including various equivalent military screening levels as
described in the Features section. Microsemi also offers numerous other Zener
products to meet higher and lower power applications.
DO-213AA
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount equivalent to JEDEC registered 1N5985
to 1N6031
Similar to operating current conditions of the BZV55
Pro Electron series of Zener products in Europe
Internal metallurgical bonds are optionally available
with “-1” suffix (see separate data sheet) with screening
options in accordance with MIL-PRF-19500 for JAN,
JANTX, JANTXV, and JANS by adding MQ, MX, MV,
or MSP prefixes respectively to part numbers
Axial-leaded equivalents available as 1N5985 to
1N6031 in the DO-35 package including “-1” suffix
options (see separate data sheet)
Regulates voltage over a broad operating current
and temperature range
Extensive selection from 2.4 to 200 V
Standard voltage tolerances are plus/minus 5% with
B suffix, 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or
1% with C or D suffix respectively
Nonsensitive to ESD (MIL-STD-750 Method 1020)
Minimal capacitance (see Figure 2)
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating and Storage temperature: -65C to +175C
Thermal Resistance: 150 C/W junction to end cap or
300
C/W for junction to ambient when mounted on FR4
PC board (1 oz Cu) with recommended footprint (see
last page)
Steady-State Power: 0.5 watts at end cap
temperatures TEC < 100
oC or 0.5 watts at ambient TA <
25
C when mounted on FR4 PC board as described for
thermal resistance (also see Figure 1)
Forward voltage @200 mA: 1.1 volts
Solder Temperatures: 260 C for 10 s (max)
CASE: Hermetically sealed glass DO-213AA
(SOD80 or MLL34) MELF style package
TERMINALS: End caps tin-lead plated solderable
per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band where
diode is to be operated with the banded end
positive with respect to the opposite end for Zener
regulation
MARKING: cathode band only
TAPE & REEL option: Standard per EIA-481-B
with 12 mm tape, 2000 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.04 grams
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
11-03-2003 REV A
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5999UR | 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 1N6005UR | 16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 1N6019CUR | 62 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 1N6021CURTR | 75 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
| 1N6023CURTR | 91 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5999B | 功能描述:稳压二极管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N5999B BK | 功能描述:DIODE ZENER 9.1V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 电压 - 齐纳（标称值）（Vz）:9.1V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:10 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 7V 不同 If 时的电压 - 正向（Vf:1.5V @ 100mA 工作温度:-65°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:2,500 |
| 1N5999B R0 | 制造商:SKMI/Taiwan 功能描述:DO-35;ZENER 500MW 9V1 |
| 1N5999B TR | 功能描述:DIODE ZENER 9.1V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:带卷（TR） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:9.1V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:10 Ohms 不同?Vr 时的电流 - 反向漏电流:100nA @ 7V 不同 If 时的电压 - 正向（Vf:1.5V @ 100mA 工作温度:-65°C ~ 200°C（TJ） 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 标准包装:10,000 |
| 1N5999B_T50A | 功能描述:稳压二极管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。