- 您现在的位置：买卖IC网 > PDF目录91006 > 1N6046B 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 PDF资料下载
参数资料
| 型号： | 1N6046B |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 封装： | HERMETIC SEALED, METAL, AXIAL PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 45K |
| 代理商： | 1N6046B |
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
39
IN60 SERIES (1500 WATT) METAL AXIAL TRANSIENT VOLTAGE
SUPPRESSORS (hermetically sealed package for harsh
industrial environments)
FEATURES
Stand-off voltage range 6.8 - 200 Volts
Glass Passivated Junction
Excellent clamping capability
Low zener impedance
100% Surge tested
-55°C to +150°C
Hermetically sealed
Bi-directional
MAXIMUM RATING
Peak Pulse Power (Ppk): 1500 Watts (10 X 1000s)
(see diagram on page 6 for wave form)
1 Watt Steady State
Response time: 1 X 10-12 seconds (theoretical)
Operating & storage temperature: -55°C to +150°C
MECHANICAL CHARACTERISTICS
CASE: Metal hermetically sealed DO-13 package
Terminals: Axial leads, solderable per MIL-STD-202 Method 208
Solderable leads = 230°C for 10 seconds (1.59mm from case)
Weight: 1.5 grammes (approx)
Voltage
5% Voltage Tolerance
Packaging Option
B = Bulk (500 pcs)
1N60
A
X
Reference
ORDERING INFORMATION
0
°C50°C100°C150°C
200
°C
0
50%
100%
Tamb
°C
Percentage peak pulse power plotted against ambient temperature
Permissible
area of
operation
0
°C50°C100°C150°C
200
°C
0
0.50
0.25
0.75
1.0
W
Tamb
°C
Continuous d.c. power dissipation plotted against junction temperature
Permissible
area of
operation
Figure 1 - Peak Power Derating Curve
Peak pulse power in percent of 25°c rating
Figure 2 - Continuous D.C. Power Derating Curve
Continuous d.c. power dissipation
31.8Min
5.33 Max
5.58
7.5
9.0
25.4 Min
0.6
0.8
All dimensions in mm
1N6036 - 1N6072A
1N6036 - 1N6072A series
相关PDF资料 |
PDF描述 |
|---|---|
| 1N6047AB | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6055B | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6056AB | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6056B | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
| 1N6058B | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-13 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6047 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 17V 1.5KW 2PIN DO-13 - Bulk |
| 1N6047A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 18V 1.5KW 2PIN DO-13 - Bulk |
| 1N6048 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 19V 1.5KW 2PIN DO-13 - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 19VWM 34.7VC DO13 |
| 1N6048A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 20V 1.5KW 2PIN DO-13 - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 20VWM 33.2VC DO13 制造商:Microwave Semiconductor 功能描述:Transient Suppressor Diode, Single, Bi-Directional, 20 Volt, DO-13 |
| 1N6048AJANTX | 制造商:Microsemi Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。