参数资料
型号: 1N6263W
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.015 A, 60 V, SILICON, SIGNAL DIODE
封装: PLASTIC, SOD-123, 2 PIN
文件页数: 1/1页
文件大小: 16K
代理商: 1N6263W
DS11014 Rev. B-2
1 of 1
1N6263W
1N6263W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
1N6263W
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
RMS Reverse Voltage
VR(RMS)
42
V
Forward Continuous Current
IF
15
mA
Non-Repetitive Peak Forward Surge Current
@ t
≤ 1.0s
@ t = 10ms
IFSM
50
2.0
mA
A
Power Dissipation (Note 1)
Pd
400
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RθJA
375
K/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +175
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Leakage Current
IRM
200
nA
VR = 50V
Forward Voltage Drop
VFM
0.41
1.0
V
IF = 1.0mA
IF = 15mA
Junction Capacitance
Cj
2.0
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
1.0
ns
IF = IR = 5.0mA
Irr = 0.1 x IR,RL = 100
Note:
1. Valid provided that terminals from the case are maintained at ambient temperature.
Features
Maximum Ratings @ TA = 25°C unless otherwise specified
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
Fast Switching Time
Low Reverse Capacitance
Surface Mount Package Ideally Suited for
Automatic Insertion
Case: SOD-123, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code
Type Code: SB
Weight: 0.01 grams (approx.)
Mechanical Data
A B
C
D
E
G
H
J
SOD-123
Dim
Min
Max
A
3.55
3.85
B
2.55
2.85
C
1.40
1.70
D
1.35
E
0.55 Typical
G
0.25
H
0.15 Typical
J
0.10
All Dimensions in mm
POWER SEMICONDUCTOR
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