参数资料
型号: 1N6275CAHE3
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封装: ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
文件页数: 2/7页
文件大小: 118K
代理商: 1N6275CAHE3
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
Document Number: 88301
Revision: 20-Sep-07
www.vishay.com
107
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
BREAKDOWN
VOLTAGE
VBR AT IT
(1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID
(4) (A)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM
(2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMP.
COEFFICIENT
OF VBR
(%/°C)
MIN
MAX
1N6267
(+)1.5KE6.8
6.12
7.48
10
5.50
1000
139
10.8
0.057
1N6267A
(+)1.5KE6.8A
6.45
7.14
10
5.80
1000
143
10.5
0.057
1N6268
(+)1.5KE7.5
6.75
8.25
10
6.05
500
128
11.7
0.061
1N6268A
(+)1.5KE7.5A
7.13
7.88
10
6.40
500
133
11.3
0.061
1N6269
(+)1.5KE8.2
7.38
9.02
10
6.63
200
120
12.5
0.065
1N6269A
(+)1.5KE8.2A
7.79
8.61
10
7.02
200
124
12.1
0.065
1N6270
(+)1.5KE9.1
8.19
10.0
1.0
7.37
50
109
13.8
0.068
1N6270A
(+)1.5KE9.1A
8.65
9.55
1.0
7.78
50
112
13.4
0.068
1N6271
(+)1.5KE10
9.00
11.0
1.0
8.10
10
100
15.0
0.073
1N6271A
(+)1.5KE10A
9.50
10.5
1.0
8.55
10
103
14.5
0.073
1N6272
(+)1.5KE11
9.90
12.1
1.0
8.92
5.0
92.6
16.2
0.075
1N6272A
(+)1.5KE11A
10.5
11.6
1.0
9.40
5.0
96.2
15.6
0.075
1N6273
(+)1.5KE12
10.8
13.2
1.0
9.72
5.0
86.7
17.3
0.076
1N6273A
(+)1.5KE12A
11.4
12.6
1.0
10.2
5.0
89.8
16.7
0.078
1N6274
(+)1.5KE13
11.7
14.3
1.0
10.5
5.0
78.9
19.0
0.081
1N6274A
(+)1.5KE13A
12.4
13.7
1.0
11.1
5.0
82.4
18.2
0.081
1N6275
(+)1.5KE15
13.5
16.5
1.0
12.1
1.0
68.2
22.0
0.084
1N6275A
(+)1.5KE15A
14.3
15.8
1.0
12.8
1.0
70.8
21.2
0.084
1N6276
(+)1.5KE16
14.4
17.6
1.0
12.9
1.0
63.8
23.5
0.086
1N6276A
(+)1.5KE16A
15.2
16.8
1.0
13.6
1.0
66.7
22.5
0.086
1N6277
(+)1.5KE18
16.2
19.8
1.0
14.5
1.0
56.6
26.5
0.088
1N6277A
(+)1.5KE18A
17.1
18.9
1.0
15.3
1.0
59.5
25.2
0.089
1N6278
(+)1.5KE20
18.0
22.0
1.0
16.2
1.0
51.5
29.1
0.090
1N6278A
(+)1.5KE20A
19.0
21.0
1.0
17.1
1.0
54.2
27.7
0.090
1N6279
(+)1.5KE22
19.8
24.2
1.0
17.8
1.0
47.0
31.9
0.092
1N6279A
(+)1.5KE22A
20.9
23.1
1.0
18.8
1.0
49.0
30.6
0.092
1N6280
(+)1.5KE24
21.6
26.4
1.0
19.4
1.0
43.2
34.7
0.094
1N6280A
(+)1.5KE24A
22.8
25.2
1.0
20.5
1.0
45.2
33.2
0.094
1N6281
(+)1.5KE27
24.3
29.7
1.0
21.8
1.0
38.4
39.1
0.096
1N6281A
(+)1.5KE27A
25.7
28.4
1.0
23.1
1.0
40.0
37.5
0.096
1N6282
(+)1.5KE30
27.0
33.0
1.0
24.3
1.0
34.5
43.5
0.097
1N6282A
(+)1.5KE30A
28.5
31.5
1.0
25.6
1.0
36.2
41.4
0.097
1N6283
(+)1.5KE33
29.7
36.3
1.0
26.8
1.0
31.4
47.7
0.098
1N6283A
(+)1.5KE33A
31.4
34.7
1.0
28.2
1.0
32.8
45.7
0.098
1N6284
(+)1.5KE36
32.4
39.6
1.0
29.1
1.0
28.8
52.0
0.099
1N6284A
(+)1.5KE36A
34.2
37.8
1.0
30.8
1.0
30.1
49.9
0.099
1N6285
(+)1.5KE39
35.1
42.9
1.0
31.6
1.0
26.6
56.4
0.100
1N6285A
(+)1.5KE39A
37.1
41.0
1.0
33.3
1.0
27.8
53.9
0.100
1N6286
(+)1.5KE43
38.7
47.3
1.0
34.8
1.0
24.2
61.9
0.101
1N6286A
(+)1.5KE43A
40.9
45.2
1.0
36.8
1.0
25.3
59.3
0.101
1N6287
(+)1.5KE47
42.3
51.7
1.0
38.1
1.0
22.1
67.8
0.101
1N6287A
(+)1.5KE47A
44.7
49.4
1.0
40.2
1.0
23.1
64.8
0.101
1N6288
(+)1.5KE51
45.9
56.1
1.0
41.3
1.0
20.4
73.5
0.102
1N6288A
(+)1.5KE51A
48.5
53.6
1.0
43.6
1.0
21.4
70.1
0.102
1N6289
(+)1.5KE56
50.4
61.8
1.0
45.4
1.0
18.6
80.5
0.103
1N6289A
(+)1.5KE56A
53.2
58.8
1.0
47.8
1.0
19.5
77.0
0.103
1N6290
(+)1.5KE62
55.8
68.2
1.0
50.2
1.0
16.9
89.0
0.104
1N6290A
(+)1.5KE62A
58.9
65.1
1.0
53.0
1.0
17.6
85.0
0.104
1N6291
(+)1.5KE68
61.2
74.8
1.0
55.1
1.0
15.3
98.0
0.104
1N6291A
(+)1.5KE68A
64.6
71.4
1.0
58.1
1.0
16.3
92.0
0.104
1N6292
(+)1.5KE75
67.5
82.5
1.0
60.7
1.0
13.9
109
0.105
1N6292A
(+)1.5KE75A
71.3
78.8
1.0
64.1
1.0
14.6
104
0.105
相关PDF资料
PDF描述
1N6276CAE3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
1N6276CHE3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
1N6281AHE3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6281HE3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6282AHE3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
1N6275CAL 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N6275CL 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
1N6275E3 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Unidirectional & Bidirectional Transient Voltage Suppressors
1N6275-E3/1 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 15V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6275-E3/4 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 15V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C