- 您现在的位置：买卖IC网 > PDF目录153693 > 1N6277A/91 (VISHAY SEMICONDUCTORS) 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE PDF资料下载
参数资料
| 型号： | 1N6277A/91 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 1.5KE, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 118K |
| 代理商： | 1N6277A/91 |
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
Document Number: 88301
Revision: 20-Sep-07
www.vishay.com
109
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient
RθJA
75
°C/W
Typical thermal resistance, junction to lead
RθJL
15.4
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.5KE6.8A-E3/54
0.968
54
1400
13" diameter paper tape and reel
1.5KE6.8AHE3/54 (1)
0.968
54
1400
13" diameter paper tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
td - Pulse Width (s)
P
PPM
-P
e
ak
P
u
lse
P
o
w
er
(k
W
)
100
75
50
25
0
25
50
75
100
125
150
175
200
P
eak
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
ercentage
,
%
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 s Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I PPM
-
P
eak
P
u
lse
C
u
rrent,
%
I
RSM
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
5
10
100
500
10
100
1000
10000
Uni-Directional
Bi-Directional
V
R = 0
V
R = Rated
Stand-Off Voltage
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
VBR - Breakdown Voltage (V)
C
J-
Capacitance
(pF)
相关PDF资料 |
PDF描述 |
|---|---|
| 1N6279/58 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6279A/4E | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6280/74 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6280A/90 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6282/4G | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6277AE3 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Unidirectional & Bidirectional Transient Voltage Suppressors |
| 1N6277A-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 18V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6277A-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 18V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6277A-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 18V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6277A-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 18V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。