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参数资料
| 型号： | 1N6285 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 1.5KE, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 102K |
| 代理商： | 1N6285 |
0
50
100
150
200
0
25
50
75
100
25
75
125
175
5
10
100
500
10
100
1,000
10,000
1
10
100
10
100
200
0
25
50
75
100 125 150 175 200
0
1.0
2.0
3.0
5.0
4.0
6.0
8.0
7.0
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
ercentage
,%
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
Fig. 4 - Typical Junction Capacitance
Fig. 6 - Maximum Non-repetitive Peak Forward
Surge Current Unidirectional Only
C
J
,Capacitance
,pF
V(BR), Breakdown Voltage (V)
Unidirectional
Bidirectional
8.3ms Single Half Sine-Wave
(JEDEC Method) TJ = TJ max.
P
M(A
V)
,Steady
State
P
o
w
er
Dissipation
(W)
Fig. 5 – Steady State Power
Derating Curve
TL — Lead Temperature (°C)
L = 0.375" (9.5mm)
Lead Lengths
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
P
eak
F
orw
ard
Surge
Current
(A)
Number of Cycles at 60 Hz
VR = Rated
Stand-off Voltage
VR = 0
f = 1 MHz
Vsig = 50mVp-p
TJ = 25°C
60 Hz
Resistive or
Inductive Load
0
50
100
150
I PPM
—
P
eak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
P
PPM
—
P
eak
Pulse
P
o
w
er
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
1.5KE6.8 thru 1.5KE440CA
and 1N6267 thru 1N6303A
TRANSZORB
Transient Voltage Suppressors
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6285/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 39V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6285/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 39V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6285/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 39V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6285A | 功能描述:TVS 二极管 - 瞬态电压抑制器 39V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6285A/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 39V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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