参数资料
| 型号： | 1N6295AG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | TVS 1500W 100V UNIDIRECT AXIAL |
| 产品变化通告： | Specification Update Storage Temp Range 14/Aug/2008 Product Obsolescence 13/Apr/2009 |
| 产品目录绘图： | Mosorb™ Axial Side |
| 标准包装： | 500 |
| 系列： | Mosorb™ |
| 电压 - 反向隔离（标准值）： | 85.5V |
| 电压 - 击穿： | 95V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
| 其它名称： | 1N6295AGOS |
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
24 V
1000
500
200
T L = 25 ° C
t P = 10 m s
V BR(NOM) = 6.8 to 13 V
20 V
43 V
1000
500
200
T L = 25 ° C
t P = 10 m s
V BR(NOM) = 6.8 to 13 V
20 V
24 V
43 V
75 V
100
50
100
50
20
10
5
2
20
10
5
2
180 V
120 V
1
0.3 0.5 0.7 1 2 3 5 7 10 20 30
1
0.3 0.5 0.7 1 2 3 5 7 10 20 30
D V BR , INSTANTANEOUS INCREASE IN V BR ABOVE V BR(NOM) (VOLTS)
D V BR , INSTANTANEOUS INCREASE IN V BR ABOVE V BR(NOM) (VOLTS)
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 m s
PULSE WIDTH
10 ms
1 ms
100 m s
0.01
0.1
0.2
0.5
1
2 5 10
20
50
100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z in is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25 ° C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6295AG | 制造商:ON Semiconductor 功能描述:TVS Diode |
| 1N6295AHE3/51 | 功能描述:TVS DIODE 137VC 82.4A IPP 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101，TransZorb? 包装:散装 零件状态:停產 类型:齐纳 电压 - 反向关态（典型值）:11.1V 电压 - 击穿（最小值）:12.4V 电压 - 箝位（最大值）@ Ipp:137V 电流 - 峰值脉冲（10/1000μs）:82.4A 功率 - 峰值脉冲:1500W（1.5kW） 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:DO-201AA，DO-27，轴向 供应商器件封装:1.5KE 标准包装:1,500 |
| 1N6295AHE3_A/C | 功能描述:TVS DIODE 137VC 10.9A IPP 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101，TransZorb? 零件状态:在售 类型:齐纳 单向通道:1 电压 - 反向关态（典型值）:85.5V 电压 - 击穿（最小值）:95V 电压 - 箝位（最大值）@ Ipp:137V 电流 - 峰值脉冲（10/1000μs）:10.9A 功率 - 峰值脉冲:1500W（1.5kW） 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:DO-201AA，DO-27，轴向 供应商器件封装:1.5KE 标准包装:1,400 |
| 1N6295CA | 制造商:SynSemi Inc 功能描述: |
| 1N6296A | 功能描述:TVS 二极管 - 瞬态电压抑制器 100V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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