参数资料
型号: 1N6373G
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: TVS 1500W 6V UNIDIRECT AXIAL
产品变化通告: Specification Update Storage Temp Range 14/Aug/2008
产品目录绘图: Surmetic™ Axial Side
标准包装: 500
系列: Mosorb™
电压 - 反向隔离(标准值): 5V
电压 - 击穿: 6V
功率(瓦特): 1500W
电极标记: 单向
安装类型: 通孔
封装/外壳: DO-201AD,轴向
供应商设备封装: 轴向
包装: 散装
产品目录页面: 2380 (CN2011-ZH PDF)
其它名称: 1N6373G-ND
1N6373GOS
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36)
1500 Watt Peak Power
Mosorb t Zener Transient
Voltage Suppressors
Unidirectional*
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high-energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor's exclusive, cost‐effective, highly reliable
Surmetic t axial leaded package and are ideally‐suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
Specification Features
? Working Peak Reverse Voltage Range - 5.0 V to 45 V
? Peak Power - 1500 Watts @ 1 ms
? ESD Rating of Class 3 (>16 KV) per Human Body Model
? Maximum Clamp Voltage @ Peak Pulse Current
? Low Leakage < 5 m A Above 10 V
? Response Time is Typically < 1 ns
? Pb-Free Packages are Available*
Mechanical Characteristics
CASE: Void‐free, transfer‐molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260 ° C, 1/16 ″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MARKING DIAGRAMS
A
1N
63xx
YYWW G
G
A
ICTE
-xx
YYWW G
G
A = Assembly Location
1N63xx = JEDEC Device Code
ICTE-xx = ON Device Code
YY = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
1N63xx, G
1N63xxRL4, G
ICTE-xx, G
ICTE-xxRL4, G
Package
Axial Lead
(Pb-Free)
Axial Lead
(Pb-Free)
Axial Lead
(Pb-Free)
Axial Lead
Shipping ?
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
(Pb-Free)
?For information on tape and reel specifications,
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 5
1
Publication Order Number:
1N6373/D
相关PDF资料
PDF描述
TSW-108-14-S-S CONN HEADER 8POS .100" SGL GOLD
TSW-133-07-T-S CONN HEADER 33POS .100" SNGL TIN
1N6278AG TVS 1500W 20V UNIDIRECT AXIAL
TSW-118-07-L-S CONN HEADER 18POS .100" SGL GOLD
1N6274AG TVS 1500W 13V UNIDIRECT AXIAL
相关代理商/技术参数
参数描述
1N6373G 制造商:ON Semiconductor 功能描述:TVS Diode
1N6373HE3/51 功能描述:DIODE GEN PURPOSE 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级,AEC-Q101,TransZorb? 包装:散装 零件状态:停產 类型:齐纳 单向通道:1 电压 - 反向关态(典型值):5V 电压 - 击穿(最小值):6V 电压 - 箝位(最大值)@ Ipp:7.5V 电流 - 峰值脉冲(10/1000μs):160A 功率 - 峰值脉冲:1500W(1.5kW) 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C(TJ) 安装类型:通孔 封装/外壳:DO-201AA,DO-27,轴向 供应商器件封装:1.5KE 标准包装:1,500
1N6373HE3/54 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 5.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6373HE3/73 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 5.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
1N6373HE3_A/C 功能描述:TVS DIODE 5VWM 7.5VC 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级,AEC-Q101,TransZorb? 包装:带卷(TR) 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态(典型值):5V 电压 - 击穿(最小值):6V 电压 - 箝位(最大值)@ Ipp:7.5V 电流 - 峰值脉冲(10/1000μs):160A 功率 - 峰值脉冲:1500W(1.5kW) 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C(TJ) 安装类型:通孔 封装/外壳:DO-201AA,DO-27,轴向 供应商器件封装:1.5KE 标准包装:1,400