参数资料
| 型号： | 1N6373RL4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER UNIDIR 1500W 6V AXIAL |
| 产品目录绘图： | Mosorb™ Axial Side |
| 标准包装： | 10 |
| 系列： | Mosorb™ |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 2387 (CN2011-ZH PDF) |
| 其它名称： | 1N6373RL4GOSCT |
1N6373 - 1N6381 Series (ICTE-5 - ICTE-36)
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L ≤ 25 ° C
Steady State Power Dissipation @ T L ≤ 75 ° C, Lead Length = 3/8 ″
Derated above T L = 75 ° C
Thermal Resistance, Junction-to-Lead
Forward Surge Current (Note 2) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
I FSM
T J , T stg
Value
1500
5.0
20
20
200
- 65 to +175
Unit
W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T A = 25 ° C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 3) = 100 A)
Symbol
I PP
V C
V RWM
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I F
I
I R
V BR
I T
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
Test Current
V C V BR V RWM
I R V F
I T
V
Q V BR
I F
Maximum Temperature Variation of V BR
Forward Current
V F
Forward Voltage @ I F
I PP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 3.5 V Max. @ I F (Note 3) = 100 A)
JEDEC
Device ?
(ON Device)
Device
Marking
V RWM
(Note 4)
(Volts)
I R @
V RWM
( m A)
Breakdown Voltage
V BR (Note 5) (Volts) @ I T
Min Nom Max (mA)
V C @ I PP (Note 6)
V C I PP
(Volts) (A)
V C (Volts) (Note 6)
@ I PP = @ I PP =
1A 10 A
Q V BR
(mV/ ° C)
1N6373, G
1N6374, G
1N6375, G
1N6376, G
1N6377, G
1N6380, G
1N6381, G
ICTE-5RLG
ICTE-10RLG
ICTE-12RLG
ICTE-15RLG
ICTE-18, G
ICTE-36RLG
1N6373
1N6374
1N6375
1N6376
1N6377
1N6380
1N6381
ICTE-5
ICTE-10
ICTE-12
ICTE-15
ICTE-18
ICTE-36
5.0
8.0
10
12
15
36
45
5.0
10
12
15
18
36
300
25
2.0
2.0
2.0
2.0
2.0
300
2.0
2.0
2.0
2.0
2.0
6.0
9.4
11.7
14.1
17.6
42.4
52.9
6.0
11.7
14.1
17.6
21.2
42.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
9.4
15
16.7
21.2
25
65.2
78.9
9.4
16.7
21.2
25
30
65.2
160
100
90
70
60
23
19
160
90
70
60
50
23
7.1
11.3
13.7
16.1
20.1
50.6
63.3
7.1
13.7
16.1
20.1
24.2
50.6
7.5
11.5
14.1
16.5
20.6
54.3
70
7.5
14.1
16.5
20.6
25.2
54.3
4.0
8.0
12
14
18
50
60
4.0
8.0
12
14
18
26
3. Square waveform, PW = 8.3 ms, non-repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or
greater than the dc or continuous peak operating voltage level.
5. V BR measured at pulse test current I T at an ambient temperature of 25 ° C and minimum voltage in V BR is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
?The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| AD8277BRZ | IC AMP GP UNITY GAIN DIFF 14SOIC |
| AD8022ARMZ-REEL7 | IC OPAMP VF DUAL LN LP 8MSOP |
| EHF-125-01-L-D-RA | CONN HEADER .05" 50POS DUAL R/A |
| TFM-120-01-S-D-WT | CONN HEADER 40POS 1.27MM GLD PCB |
| TMM-110-01-T-S | CONN HEADER 10POS SNGL 2MM T/H |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6373RL4G-CUT TAPE | 制造商:ON 功能描述:1N6373 Series 6 V 1500 W Unidirectional Zener Transient Voltage Suppressor |
| 1N6373TR | 制造商:Micro Commercial Components (MCC) 功能描述:DIODE |
| 1N6374 | 功能描述:TVS 二极管 - 瞬态电压抑制器 9.4V 1500W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6374/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6374/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 8.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。